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PSHI 25/06

PSHI 25/06 POWERSEM

PSHI25-06-DTE.pdf
Hersteller: POWERSEM
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 17A
Max. off-state voltage: 0.6kV
Electrical mounting: THT
Semiconductor structure: transistor/transistor
Case: ECO-PAC 2
Gate-emitter voltage: ±20V
Collector current: 17A
Topology: H-bridge
Type of semiconductor module: IGBT
Power dissipation: 82W
Mechanical mounting: screw
Pulsed collector current: 30A
Application: motors
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Technische Details PSHI 25/06 POWERSEM

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 17A, Max. off-state voltage: 0.6kV, Electrical mounting: THT, Semiconductor structure: transistor/transistor, Case: ECO-PAC 2, Gate-emitter voltage: ±20V, Collector current: 17A, Topology: H-bridge, Type of semiconductor module: IGBT, Power dissipation: 82W, Mechanical mounting: screw, Pulsed collector current: 30A, Application: motors.