| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.18 EUR |
| 10+ | 3.8 EUR |
| 100+ | 2.64 EUR |
| 500+ | 1.92 EUR |
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Technische Details PSMB050N10NS2_R2_00601 Panjit
Description: 100V/ 5MOHM/ LOW FOM MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 3910 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: TO-263, Part Status: Active, Packaging: Tape & Reel (TR), Vgs(th) (Max) @ Id: 3.8V @ 270µA, Power Dissipation (Max): 138W (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB.
Weitere Produktangebote PSMB050N10NS2_R2_00601 nach Preis ab 2.7 EUR bis 5.55 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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PSMB050N10NS2_R2_00601 | Panjit International Inc. |
 Description: 100V/ 5MOHM/ LOW FOM MOSFETInput Capacitance (Ciss) (Max) @ Vds: 3910 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: TO-263 Vgs(th) (Max) @ Id: 3.8V @ 270µA Power Dissipation (Max): 138W (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Part Status: Active Packaging: Cut Tape (CT) |
auf Bestellung 617 Stücke: Lieferzeit 10-14 Tag (e) |
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| PSMB050N10NS2_R2_00601 |
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Hersteller: Panjit International Inc.
Description: 100V/ 5MOHM/ LOW FOM MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 3910 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-263
Vgs(th) (Max) @ Id: 3.8V @ 270µA
Power Dissipation (Max): 138W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Part Status: Active
Packaging: Cut Tape (CT)
Description: 100V/ 5MOHM/ LOW FOM MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 3910 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-263
Vgs(th) (Max) @ Id: 3.8V @ 270µA
Power Dissipation (Max): 138W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 617 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.55 EUR |
| 10+ | 3.9 EUR |
| 100+ | 2.7 EUR |