auf Bestellung 1163 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.08 EUR |
| 10+ | 2.76 EUR |
| 800+ | 1.32 EUR |
| 2400+ | 1.13 EUR |
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Technische Details PSMB055N08NS1_R2_00601 Panjit
Description: 80V/ 5.5MOHM / MV MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 108A (Tc), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V, Power Dissipation (Max): 113.6W (Tc), Vgs(th) (Max) @ Id: 3.75V @ 250µA, Supplier Device Package: TO-263, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 7 V, Input Capacitance (Ciss) (Max) @ Vds: 4773 pF @ 40 V.
Weitere Produktangebote PSMB055N08NS1_R2_00601
| Foto | Bezeichnung | Hersteller | Beschreibung |
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PSMB055N08NS1_R2_00601 | Hersteller : Panjit International Inc. |
 Description: 80V/ 5.5MOHM / MV MOSFETPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 108A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V Power Dissipation (Max): 113.6W (Tc) Vgs(th) (Max) @ Id: 3.75V @ 250µA Supplier Device Package: TO-263 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 7 V Input Capacitance (Ciss) (Max) @ Vds: 4773 pF @ 40 V |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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| PSMB055N08NS1_R2_00601 | Hersteller : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263 Case: TO263 Drain-source voltage: 80V Drain current: 108A On-state resistance: 7mΩ Type of transistor: N-MOSFET Power dissipation: 113.6W Polarisation: unipolar Kind of package: reel; tape Gate charge: 65.8nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 360A Mounting: SMD Anzahl je Verpackung: 1 Stücke |
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PSMB055N08NS1_R2_00601 | Hersteller : Panjit International Inc. |
Description: 80V/ 5.5MOHM / MV MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 108A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V Power Dissipation (Max): 113.6W (Tc) Vgs(th) (Max) @ Id: 3.75V @ 250µA Supplier Device Package: TO-263 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 7 V Input Capacitance (Ciss) (Max) @ Vds: 4773 pF @ 40 V |
Produkt ist nicht verfügbar |
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| PSMB055N08NS1_R2_00601 | Hersteller : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263 Case: TO263 Drain-source voltage: 80V Drain current: 108A On-state resistance: 7mΩ Type of transistor: N-MOSFET Power dissipation: 113.6W Polarisation: unipolar Kind of package: reel; tape Gate charge: 65.8nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 360A Mounting: SMD |
Produkt ist nicht verfügbar |