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PSMN005-75P,127

PSMN005-75P,127 NEXPERIA


322007614023849psmn005-75p.pdf Hersteller: NEXPERIA
Trans MOSFET N-CH Si 75V 75A 3-Pin(3+Tab) TO-220AB Rail
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Technische Details PSMN005-75P,127 NEXPERIA

Description: MOSFET N-CH 75V 75A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V, Power Dissipation (Max): 230W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8250 pF @ 25 V.

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PSMN005-75P,127 PSMN005-75P,127 Hersteller : Nexperia USA Inc. PSMN005-75P.pdf Description: MOSFET N-CH 75V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8250 pF @ 25 V
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PSMN005-75P,127 PSMN005-75P,127 Hersteller : Nexperia PSMN005_75P-2939012.pdf MOSFET PSMN005-75P/SOT78/SIL3P
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