Produkte > NEXPERIA USA INC. > PSMN009-100B,118
PSMN009-100B,118

PSMN009-100B,118 Nexperia USA Inc.

PSMN009-100B.pdf
Hersteller: Nexperia USA Inc.
Description: NEXPERIA PSMN009-100B - 75A, 100
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 8250 pF @ 25 V
auf Bestellung 3762 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
241+2.03 EUR
Mindestbestellmenge: 241 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details PSMN009-100B,118 Nexperia USA Inc.

Description: NEXPERIA PSMN009-100B - 75A, 100, Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Bulk, Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 230W (Tc), Rds On (Max) @ Id, Vgs: 8.8mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Input Capacitance (Ciss) (Max) @ Vds: 8250 pF @ 25 V.

Weitere Produktangebote PSMN009-100B,118

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
PSMN009-100B,118 NXP PSMN009-100B.pdf Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMN009-100B,118 PSMN009-100B,118 Nexperia USA Inc. PSMN009-100B.pdf Description: MOSFET N-CH 100V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 8250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PSMN009-100B,118 PSMN009-100B,118 Nexperia USA Inc. PSMN009-100B.pdf Description: MOSFET N-CH 100V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 8250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMN009-100B,118 PSMN009-100B,118 Nexperia PSMN009_100B-2938899.pdf MOSFET PSMN009-100B/SOT404/D2PAK
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PSMN009-100B,118 PSMN009-100B.pdf
Hersteller: NXP
Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMN009-100B,118 PSMN009-100B.pdf
PSMN009-100B,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 8250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 4800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PSMN009-100B,118 PSMN009-100B.pdf
PSMN009-100B,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 8250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMN009-100B,118 PSMN009_100B-2938899.pdf
PSMN009-100B,118
Hersteller: Nexperia
MOSFET PSMN009-100B/SOT404/D2PAK
Produkt ist nicht verfügbar
Mindestbestellmenge: 4800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH