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PSMN009-100P,127

PSMN009-100P,127 NXP Semiconductors

PSMN009-100P.pdf Hersteller: NXP Semiconductors
Description: NEXPERIA PSMN009-100P - 75A, 100
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8250 pF @ 25 V
auf Bestellung 291 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
192+2.55 EUR
Mindestbestellmenge: 192
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details PSMN009-100P,127 NXP Semiconductors

Description: NEXPERIA PSMN009-100P - 75A, 100, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 8.8mOhm @ 25A, 10V, Power Dissipation (Max): 230W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8250 pF @ 25 V.

Weitere Produktangebote PSMN009-100P,127 nach Preis ab 3.21 EUR bis 7.46 EUR

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PSMN009-100P,127 PSMN009-100P,127 Hersteller : Nexperia 4381148142552845psmn009-100p.pdf Trans MOSFET N-CH Si 100V 75A 3-Pin(3+Tab) TO-220AB Rail
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+4.28 EUR
500+3.89 EUR
1000+3.55 EUR
10000+3.21 EUR
Mindestbestellmenge: 129
Im Einkaufswagen  Stück im Wert von  UAH
PSMN009-100P,127 PSMN009-100P,127 Hersteller : Nexperia 4381148142552845psmn009-100p.pdf Trans MOSFET N-CH Si 100V 75A 3-Pin(3+Tab) TO-220AB Rail
auf Bestellung 2250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+4.28 EUR
500+3.89 EUR
1000+3.55 EUR
Mindestbestellmenge: 129
Im Einkaufswagen  Stück im Wert von  UAH
PSMN009-100P,127 PSMN009-100P,127 Hersteller : Nexperia 4381148142552845psmn009-100p.pdf Trans MOSFET N-CH Si 100V 75A 3-Pin(3+Tab) TO-220AB Rail
auf Bestellung 4250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+4.28 EUR
500+3.89 EUR
1000+3.55 EUR
Mindestbestellmenge: 129
Im Einkaufswagen  Stück im Wert von  UAH
PSMN009-100P,127 PSMN009-100P,127 Hersteller : NEXPERIA PSMN009-100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 400A; 230W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 65A
Pulsed drain current: 400A
Power dissipation: 230W
Case: SOT78; TO220AB
On-state resistance: 23.8mΩ
Mounting: THT
Gate charge: 156nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 781 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+7.46 EUR
11+6.58 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
PSMN009-100P,127 PSMN009-100P,127 Hersteller : NEXPERIA PSMN009-100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 400A; 230W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 65A
Pulsed drain current: 400A
Power dissipation: 230W
Case: SOT78; TO220AB
On-state resistance: 23.8mΩ
Mounting: THT
Gate charge: 156nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 781 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.46 EUR
11+6.58 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
PSMN009-100P,127 Hersteller : NXP Semiconductors PSMN009-100P.pdf Trans MOSFET N-CH Si 100V 75A 3-Pin(3+Tab) TO-220AB Rail
auf Bestellung 291 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+4.28 EUR
Mindestbestellmenge: 129
Im Einkaufswagen  Stück im Wert von  UAH
PSMN009-100P,127 PSMN009-100P,127 Hersteller : Nexperia 4381148142552845psmn009-100p.pdf Trans MOSFET N-CH Si 100V 75A 3-Pin(3+Tab) TO-220AB Rail
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMN009-100P,127 PSMN009-100P,127 Hersteller : NEXPERIA 4381148142552845psmn009-100p.pdf Trans MOSFET N-CH Si 100V 75A 3-Pin(3+Tab) TO-220AB Rail
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMN009-100P,127 PSMN009-100P,127 Hersteller : Nexperia USA Inc. PSMN009-100P.pdf Description: MOSFET N-CH 100V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8250 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMN009-100P,127 PSMN009-100P,127 Hersteller : Nexperia PSMN009_100P-2938876.pdf MOSFET PSMN009-100P/SOT78/SIL3P
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH