PSMN013-40VLDX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 40V 42A LFPAK56D
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 19.4nC @ 10V
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta)
Drain to Source Voltage (Vdss): 40V
Power - Max: 46W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
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Technische Details PSMN013-40VLDX Nexperia USA Inc.
Description: NEXPERIA - PSMN013-40VLDX - Dual-MOSFET, n-Kanal, 40 V, 40 V, 42 A, 42 A, 0.0136 ohm, tariffCode: 85412900, Drain-Source-Spannung Vds: 40V, rohsCompliant: YES, Dauer-Drainstrom Id: 42A, Dauer-Drainstrom Id, p-Kanal: 42A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: 40V, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 42A, Drain-Source-Durchgangswiderstand, p-Kanal: -, Verlustleistung, p-Kanal: 46W, Drain-Source-Spannung Vds, n-Kanal: 40V, euEccn: NLR, Bauform - Transistor: LFPAK56D, Anzahl der Pins: 8Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.0136ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 46W, Betriebstemperatur, max.: 175°C, SVHC: No SVHC (25-Jun-2025).
Weitere Produktangebote PSMN013-40VLDX nach Preis ab 0.73 EUR bis 4.4 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
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PSMN013-40VLDX | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; NextPowerS3; unipolar; 40V; 30A; Idm: 169A Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 30A Pulsed drain current: 169A Power dissipation: 46W Case: LFPAK56D; SOT1205 Gate-source voltage: ±20V On-state resistance: 32.8mΩ Mounting: SMD Gate charge: 19.4nC Kind of package: reel; tape Kind of channel: enhancement Technology: NextPowerS3 |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN013-40VLDX | NEXPERIA |
Description: NEXPERIA - PSMN013-40VLDX - Dual-MOSFET, n-Kanal, 40 V, 40 V, 42 A, 42 A, 0.0136 ohm tariffCode: 85412900 Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 42A Dauer-Drainstrom Id, p-Kanal: 42A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 40V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 42A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 46W Drain-Source-Spannung Vds, n-Kanal: 40V euEccn: NLR Bauform - Transistor: LFPAK56D Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.0136ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 46W Betriebstemperatur, max.: 175°C SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 1192 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN013-40VLDX | Nexperia |
MOSFETs The factory is currently not accepting orders for this product. |
auf Bestellung 1356 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN013-40VLDX | NEXPERIA |
Description: NEXPERIA - PSMN013-40VLDX - Dual-MOSFET, n-Kanal, 40 V, 40 V, 42 A, 42 A, 0.0136 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 42A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 40V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 42A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 46W Drain-Source-Spannung Vds, n-Kanal: 40V euEccn: NLR Bauform - Transistor: LFPAK56D Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.0136ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 46W Betriebstemperatur, max.: 175°C SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 1192 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN013-40VLDX | Nexperia USA Inc. |
Description: MOSFET 2N-CH 40V 42A LFPAK56D Current - Continuous Drain (Id) @ 25°C: 42A (Ta) Drain to Source Voltage (Vdss): 40V Power - Max: 46W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Packaging: Cut Tape (CT) Supplier Device Package: LFPAK56D Vgs(th) (Max) @ Id: 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 19.4nC @ 10V Rds On (Max) @ Id, Vgs: 13.6mOhm @ 10A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 25V |
auf Bestellung 5858 Stücke: Lieferzeit 10-14 Tag (e) |
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| PSMN013-40VLDX |
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Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; NextPowerS3; unipolar; 40V; 30A; Idm: 169A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 30A
Pulsed drain current: 169A
Power dissipation: 46W
Case: LFPAK56D; SOT1205
Gate-source voltage: ±20V
On-state resistance: 32.8mΩ
Mounting: SMD
Gate charge: 19.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; NextPowerS3; unipolar; 40V; 30A; Idm: 169A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 30A
Pulsed drain current: 169A
Power dissipation: 46W
Case: LFPAK56D; SOT1205
Gate-source voltage: ±20V
On-state resistance: 32.8mΩ
Mounting: SMD
Gate charge: 19.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 57+ | 1.51 EUR |
| 69+ | 1.24 EUR |
| 82+ | 1.04 EUR |
| 100+ | 0.94 EUR |
| 250+ | 0.87 EUR |
| 500+ | 0.82 EUR |
| 1000+ | 0.75 EUR |
| 1500+ | 0.73 EUR |
| PSMN013-40VLDX |
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Hersteller: NEXPERIA
Description: NEXPERIA - PSMN013-40VLDX - Dual-MOSFET, n-Kanal, 40 V, 40 V, 42 A, 42 A, 0.0136 ohm
tariffCode: 85412900
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 42A
Dauer-Drainstrom Id, p-Kanal: 42A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 40V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 42A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 46W
Drain-Source-Spannung Vds, n-Kanal: 40V
euEccn: NLR
Bauform - Transistor: LFPAK56D
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0136ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 46W
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (25-Jun-2025)
Description: NEXPERIA - PSMN013-40VLDX - Dual-MOSFET, n-Kanal, 40 V, 40 V, 42 A, 42 A, 0.0136 ohm
tariffCode: 85412900
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 42A
Dauer-Drainstrom Id, p-Kanal: 42A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 40V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 42A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 46W
Drain-Source-Spannung Vds, n-Kanal: 40V
euEccn: NLR
Bauform - Transistor: LFPAK56D
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0136ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 46W
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 1192 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 2.34 EUR |
| 126+ | 1.7 EUR |
| 500+ | 1.62 EUR |
| 1000+ | 1.5 EUR |
| PSMN013-40VLDX |
|
Hersteller: Nexperia
MOSFETs The factory is currently not accepting orders for this product.
MOSFETs The factory is currently not accepting orders for this product.
auf Bestellung 1356 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.8 EUR |
| 10+ | 2.4 EUR |
| 100+ | 1.63 EUR |
| 500+ | 1.29 EUR |
| 1000+ | 1.13 EUR |
| PSMN013-40VLDX |
|
Hersteller: NEXPERIA
Description: NEXPERIA - PSMN013-40VLDX - Dual-MOSFET, n-Kanal, 40 V, 40 V, 42 A, 42 A, 0.0136 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 42A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 40V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 42A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 46W
Drain-Source-Spannung Vds, n-Kanal: 40V
euEccn: NLR
Bauform - Transistor: LFPAK56D
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0136ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 46W
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (25-Jun-2025)
Description: NEXPERIA - PSMN013-40VLDX - Dual-MOSFET, n-Kanal, 40 V, 40 V, 42 A, 42 A, 0.0136 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 42A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 40V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 42A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 46W
Drain-Source-Spannung Vds, n-Kanal: 40V
euEccn: NLR
Bauform - Transistor: LFPAK56D
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0136ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 46W
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 1192 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 66+ | 3.82 EUR |
| 100+ | 2.34 EUR |
| 126+ | 1.7 EUR |
| 500+ | 1.62 EUR |
| 1000+ | 1.5 EUR |
| PSMN013-40VLDX |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 40V 42A LFPAK56D
Current - Continuous Drain (Id) @ 25°C: 42A (Ta)
Drain to Source Voltage (Vdss): 40V
Power - Max: 46W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Cut Tape (CT)
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 19.4nC @ 10V
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 25V
Description: MOSFET 2N-CH 40V 42A LFPAK56D
Current - Continuous Drain (Id) @ 25°C: 42A (Ta)
Drain to Source Voltage (Vdss): 40V
Power - Max: 46W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Cut Tape (CT)
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 19.4nC @ 10V
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 25V
auf Bestellung 5858 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.4 EUR |
| 10+ | 2.8 EUR |
| 50+ | 2.12 EUR |
| 100+ | 1.89 EUR |