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PSMN017-80BS,118

PSMN017-80BS,118 Nexperia USA Inc.


PSMN017-80BS.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 50A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1573 pF @ 40 V
auf Bestellung 4000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+1.31 EUR
1600+1.21 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details PSMN017-80BS,118 Nexperia USA Inc.

Description: MOSFET N-CH 80V 50A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V, Power Dissipation (Max): 103W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1573 pF @ 40 V.

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PSMN017-80BS,118 PSMN017-80BS,118 Hersteller : Nexperia USA Inc. PSMN017-80BS.pdf Description: MOSFET N-CH 80V 50A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1573 pF @ 40 V
auf Bestellung 4551 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.01 EUR
10+2.57 EUR
50+1.95 EUR
100+1.74 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
PSMN017-80BS,118 PSMN017-80BS,118 Hersteller : Nexperia 3008719894299641psmn017-80bs.pdf Trans MOSFET N-CH 80V 50A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
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PSMN017-80BS,118 PSMN017-80BS,118 Hersteller : NEXPERIA 3008719894299641psmn017-80bs.pdf Trans MOSFET N-CH 80V 50A 3-Pin(2+Tab) D2PAK T/R
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PSMN017-80BS,118 Hersteller : NEXPERIA PSMN017-80BS.pdf PSMN017-80BS.118 SMD N channel transistors
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PSMN017-80BS,118 PSMN017-80BS,118 Hersteller : Nexperia PSMN017-80BS.pdf MOSFETs PSMN017-80BS/SOT404/D2PAK
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