
auf Bestellung 2250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
123+ | 1.21 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PSMN017-80PS,127 Nexperia
Description: MOSFET N-CH 80V 50A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V, Power Dissipation (Max): 103W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1573 pF @ 40 V.
Weitere Produktangebote PSMN017-80PS,127 nach Preis ab 1.17 EUR bis 2.85 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
PSMN017-80PS,127 | Hersteller : Nexperia |
![]() |
auf Bestellung 2250 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
PSMN017-80PS,127 | Hersteller : NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 50A; Idm: 200A; 103W Mounting: THT Case: SOT78; TO220AB Drain-source voltage: 80V Drain current: 50A On-state resistance: 15.2mΩ Type of transistor: N-MOSFET Power dissipation: 103W Polarisation: unipolar Kind of package: tube Gate charge: 26nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 200A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||
![]() |
PSMN017-80PS,127 | Hersteller : NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 50A; Idm: 200A; 103W Mounting: THT Case: SOT78; TO220AB Drain-source voltage: 80V Drain current: 50A On-state resistance: 15.2mΩ Type of transistor: N-MOSFET Power dissipation: 103W Polarisation: unipolar Kind of package: tube Gate charge: 26nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 200A |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
PSMN017-80PS,127 | Hersteller : Nexperia USA Inc. |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V Power Dissipation (Max): 103W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1573 pF @ 40 V |
auf Bestellung 5913 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
PSMN017-80PS,127 | Hersteller : Nexperia |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||||||
![]() |
PSMN017-80PS,127 | Hersteller : NEXPERIA |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||||||
![]() |
PSMN017-80PS,127 | Hersteller : Nexperia |
![]() |
Produkt ist nicht verfügbar |