| Anzahl | Privatkunde |
|---|---|
| 123+ | 1.45 EUR |
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Lieferzeit:
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Mindestmenge:
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Technische Details PSMN017-80PS,127 Nexperia
Description: MOSFET N-CH 80V 50A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V, Power Dissipation (Max): 103W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1573 pF @ 40 V.
Weitere Produktangebote PSMN017-80PS,127 nach Preis ab 1.45 EUR bis 3.45 EUR
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PSMN017-80PS,127 | Nexperia |
 Trans MOSFET N-CH 80V 50A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 2250 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN017-80PS,127 | Nexperia USA Inc. |
Description: MOSFET N-CH 80V 50A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V Power Dissipation (Max): 103W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1573 pF @ 40 V |
auf Bestellung 5913 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN017-80PS,127 | Nexperia |
Trans MOSFET N-CH 80V 50A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 1040 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN017-80PS,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 50A; Idm: 200A; 103W Case: SOT78; TO220AB Type of transistor: N-MOSFET Mounting: THT Kind of package: tube Polarisation: unipolar Pulsed drain current: 200A Drain current: 50A Drain-source voltage: 80V Gate-source voltage: ±20V Gate charge: 26nC On-state resistance: 15.2mΩ Power dissipation: 103W Kind of channel: enhancement |
auf Bestellung 39 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| PSMN017-80PS,127 |
|
Hersteller: Nexperia
Trans MOSFET N-CH 80V 50A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH 80V 50A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 2250 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 123+ | 1.45 EUR |
| PSMN017-80PS,127 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 50A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1573 pF @ 40 V
Description: MOSFET N-CH 80V 50A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1573 pF @ 40 V
auf Bestellung 5913 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.39 EUR |
| 10+ | 2.82 EUR |
| 100+ | 2.24 EUR |
| 500+ | 1.89 EUR |
| 1000+ | 1.61 EUR |
| 2000+ | 1.52 EUR |
| 5000+ | 1.48 EUR |
| PSMN017-80PS,127 |
|
Hersteller: Nexperia
Trans MOSFET N-CH 80V 50A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH 80V 50A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 1040 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 194+ | 3.45 EUR |
| 500+ | 3.07 EUR |
| 1000+ | 2.76 EUR |
| PSMN017-80PS,127 |
|
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 50A; Idm: 200A; 103W
Case: SOT78; TO220AB
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Pulsed drain current: 200A
Drain current: 50A
Drain-source voltage: 80V
Gate-source voltage: ±20V
Gate charge: 26nC
On-state resistance: 15.2mΩ
Power dissipation: 103W
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 50A; Idm: 200A; 103W
Case: SOT78; TO220AB
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Pulsed drain current: 200A
Drain current: 50A
Drain-source voltage: 80V
Gate-source voltage: ±20V
Gate charge: 26nC
On-state resistance: 15.2mΩ
Power dissipation: 103W
Kind of channel: enhancement
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)