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PSMN028N10NS2-R2 Panjit



Hersteller: Panjit
MOSFETs
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Technische Details PSMN028N10NS2-R2 Panjit

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 240A; Idm: 960A; 167W; TOLL, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 240A, Pulsed drain current: 960A, Power dissipation: 167W, Case: TOLL, Gate-source voltage: ±20V, On-state resistance: 2.8mΩ, Mounting: SMD, Gate charge: 65nC, Kind of package: reel; tape, Kind of channel: enhancement.

Weitere Produktangebote PSMN028N10NS2-R2

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
PSMN028N10NS2_R2_00201 PanJit Semiconductor 20230516171020ta7o3bGUZ1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 240A; Idm: 960A; 167W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 240A
Pulsed drain current: 960A
Power dissipation: 167W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMN028N10NS2_R2_00201 20230516171020ta7o3bGUZ1.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 240A; Idm: 960A; 167W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 240A
Pulsed drain current: 960A
Power dissipation: 167W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH