Technische Details PSMN029-100HLX Nexperia
Description: MOSFET 2N-CH 100V 30A LFPAK56D, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 68W (Ta), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 3637pF @ 25V, Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 29.6nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK56D.
Weitere Produktangebote PSMN029-100HLX nach Preis ab 1.14 EUR bis 5.93 EUR
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PSMN029-100HLX | Hersteller : Nexperia |
 Trans MOSFET N-CH 100V 30A 8-Pin LFPAK-D |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN029-100HLX | Hersteller : Nexperia |
MOSFETs SOT1205 100V 30A |
auf Bestellung 3546 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN029-100HLX | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2N-CH 100V 30A LFPAK56D Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 68W (Ta) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 3637pF @ 25V Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 29.6nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D |
auf Bestellung 1485 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN029-100HLX | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2N-CH 100V 30A LFPAK56D Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 68W (Ta) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 3637pF @ 25V Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 29.6nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D |
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