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PSMN030-150P,127

PSMN030-150P,127 Nexperia


4381005928575498psmn030-150p.pdf Hersteller: Nexperia
Trans MOSFET N-CH Si 150V 55.5A 3-Pin(3+Tab) TO-220AB Rail
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Technische Details PSMN030-150P,127 Nexperia

Description: MOSFET N-CH 150V 55.5A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 55.5A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V.

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PSMN030-150P,127 PSMN030-150P,127 Hersteller : NEXPERIA 4381005928575498psmn030-150p.pdf Trans MOSFET N-CH Si 150V 55.5A 3-Pin(3+Tab) TO-220AB Rail
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PSMN030-150P,127 PSMN030-150P,127 Hersteller : NEXPERIA PSMN030-150P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 55.5A; Idm: 222A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 55.5A
Pulsed drain current: 222A
Power dissipation: 250W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 16nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
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PSMN030-150P,127 PSMN030-150P,127 Hersteller : Nexperia USA Inc. PSMN030-150P.pdf Description: MOSFET N-CH 150V 55.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55.5A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Produkt ist nicht verfügbar
PSMN030-150P,127 PSMN030-150P,127 Hersteller : Nexperia PSMN030_150P-2938765.pdf MOSFET PSMN030-150P/SOT78/SIL3P
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PSMN030-150P,127 PSMN030-150P,127 Hersteller : NEXPERIA PSMN030-150P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 55.5A; Idm: 222A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 55.5A
Pulsed drain current: 222A
Power dissipation: 250W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 16nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar