PSMN040-100MSEX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 30A LFPAK33
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 91W (Tc)
Rds On (Max) @ Id, Vgs: 36.6mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 1500+ | 0.74 EUR |
| 3000+ | 0.68 EUR |
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Technische Details PSMN040-100MSEX Nexperia USA Inc.
Description: MOSFET N-CH 100V 30A LFPAK33, Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: LFPAK33, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 91W (Tc), Rds On (Max) @ Id, Vgs: 36.6mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-1210, 8-LFPAK33 (5-Lead), Packaging: Tape & Reel (TR).
Weitere Produktangebote PSMN040-100MSEX nach Preis ab 1.09 EUR bis 2.62 EUR
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PSMN040-100MSEX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 100V 30A LFPAK33 Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: LFPAK33 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 91W (Tc) Rds On (Max) @ Id, Vgs: 36.6mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Packaging: Cut Tape (CT) |
auf Bestellung 27770 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN040-100MSEX | Hersteller : Nexperia |
Trans MOSFET N-CH 100V 30A 8-Pin LFPAK EP T/R |
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PSMN040-100MSEX | Hersteller : Nexperia |
MOSFETs SOT1210 100V 30A N-CH MOSFET |
Produkt ist nicht verfügbar |
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| PSMN040-100MSEX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 121A; 91W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 30A Pulsed drain current: 121A Power dissipation: 91W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 29.4mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |