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PSMN040-100MSEX Nexperia USA Inc.


PSMN040-100MSE.pdf
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 30A LFPAK33
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 91W (Tc)
Rds On (Max) @ Id, Vgs: 36.6mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Tape & Reel (TR)
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+0.88 EUR
3000+0.81 EUR
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details PSMN040-100MSEX Nexperia USA Inc.

Description: MOSFET N-CH 100V 30A LFPAK33, Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: LFPAK33, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 91W (Tc), Rds On (Max) @ Id, Vgs: 36.6mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-1210, 8-LFPAK33 (5-Lead), Packaging: Tape & Reel (TR).

Weitere Produktangebote PSMN040-100MSEX nach Preis ab 1.3 EUR bis 3.12 EUR

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PSMN040-100MSEX PSMN040-100MSEX Nexperia USA Inc. PSMN040-100MSE.pdf Description: MOSFET N-CH 100V 30A LFPAK33
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 91W (Tc)
Rds On (Max) @ Id, Vgs: 36.6mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Cut Tape (CT)
auf Bestellung 27770 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.12 EUR
11+1.96 EUR
50+1.46 EUR
100+1.3 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PSMN040-100MSEX PSMN040-100MSE.pdf
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 30A LFPAK33
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 91W (Tc)
Rds On (Max) @ Id, Vgs: 36.6mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Cut Tape (CT)
auf Bestellung 27770 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.12 EUR
11+1.96 EUR
50+1.46 EUR
100+1.3 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH