PSMN045-100HLX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 100V 21A LFPAK56D
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 53W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Cut Tape (CT)
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 2.1V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 5V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2152pF @ 25V
| Anzahl | Preis |
|---|---|
| 7+ | 2.52 EUR |
| 10+ | 2.06 EUR |
| 100+ | 1.6 EUR |
| 500+ | 1.36 EUR |
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Technische Details PSMN045-100HLX Nexperia USA Inc.
Description: MOSFET 2N-CH 100V 21A LFPAK56D, Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: SOT-1205, 8-LFPAK56, Packaging: Tape & Reel (TR), Supplier Device Package: LFPAK56D, Vgs(th) (Max) @ Id: 2.1V @ 1mA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 5V, Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 2152pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), Drain to Source Voltage (Vdss): 100V, Power - Max: 53W (Ta), Technology: MOSFET (Metal Oxide).
Weitere Produktangebote PSMN045-100HLX nach Preis ab 0.85 EUR bis 2.68 EUR
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PSMN045-100HLX | Hersteller : Nexperia |
MOSFETs The factory is currently not accepting orders for this product. |
auf Bestellung 2075 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN045-100HLX | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2N-CH 100V 21A LFPAK56D Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Packaging: Tape & Reel (TR) Supplier Device Package: LFPAK56D Vgs(th) (Max) @ Id: 2.1V @ 1mA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 5V Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 2152pF @ 25V Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Drain to Source Voltage (Vdss): 100V Power - Max: 53W (Ta) Technology: MOSFET (Metal Oxide) |
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