PSMN1R0-100ASEJ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: PSMN1R0-100ASE/SOT8000A/CCPAK1
Packaging: Cut Tape (CT)
Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 430A (Tc)
Rds On (Max) @ Id, Vgs: 1.04mOhm @ 25A, 10V
Power Dissipation (Max): 1.55kW (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: CCPAK1212
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 509 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 36460 pF @ 50 V
auf Bestellung 85 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 15.35 EUR |
| 10+ | 12.65 EUR |
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Technische Details PSMN1R0-100ASEJ Nexperia USA Inc.
Description: PSMN1R0-100ASE/SOT8000A/CCPAK1, Packaging: Tape & Reel (TR), Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 430A (Tc), Rds On (Max) @ Id, Vgs: 1.04mOhm @ 25A, 10V, Power Dissipation (Max): 1.55kW (Tc), Vgs(th) (Max) @ Id: 3.6V @ 1mA, Supplier Device Package: CCPAK1212, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 509 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 36460 pF @ 50 V.
Weitere Produktangebote PSMN1R0-100ASEJ nach Preis ab 10.7 EUR bis 15.42 EUR
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PSMN1R0-100ASEJ | Hersteller : Nexperia |
MOSFETs N-channel, 100 V, 1.04 mOhm, MOSFET with enhanced SOA in CCPAK1212 package |
auf Bestellung 1002 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN1R0-100ASEJ | Hersteller : Nexperia USA Inc. |
Description: PSMN1R0-100ASE/SOT8000A/CCPAK1 Packaging: Tape & Reel (TR) Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 430A (Tc) Rds On (Max) @ Id, Vgs: 1.04mOhm @ 25A, 10V Power Dissipation (Max): 1.55kW (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: CCPAK1212 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 509 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 36460 pF @ 50 V |
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