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PSMN1R0-30YLEX

PSMN1R0-30YLEX Nexperia USA Inc.


PSMN1R0-30YLE.pdf
Hersteller: Nexperia USA Inc.
Description: PSMN1R0-30YLE/SOT669/LFPAK
Input Capacitance (Ciss) (Max) @ Vds: 7389 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.2V @ 2mA
Power Dissipation (Max): 224W (Tc)
Rds On (Max) @ Id, Vgs: 1.11mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 275A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+1.41 EUR
3000+1.33 EUR
Mindestbestellmenge: 1500
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Technische Details PSMN1R0-30YLEX Nexperia USA Inc.

Description: PSMN1R0-30YLE/SOT669/LFPAK, Input Capacitance (Ciss) (Max) @ Vds: 7389 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Part Status: Active, Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 2.2V @ 2mA, Power Dissipation (Max): 224W (Tc), Rds On (Max) @ Id, Vgs: 1.11mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 275A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR).

Weitere Produktangebote PSMN1R0-30YLEX nach Preis ab 1.63 EUR bis 4.77 EUR

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PSMN1R0-30YLEX PSMN1R0-30YLEX Hersteller : Nexperia USA Inc. PSMN1R0-30YLE.pdf Description: PSMN1R0-30YLE/SOT669/LFPAK
Input Capacitance (Ciss) (Max) @ Vds: 7389 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.2V @ 2mA
Power Dissipation (Max): 224W (Tc)
Rds On (Max) @ Id, Vgs: 1.11mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 275A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
auf Bestellung 4309 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.42 EUR
10+2.85 EUR
100+1.97 EUR
500+1.63 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
PSMN1R0-30YLEX PSMN1R0-30YLEX Hersteller : Nexperia PSMN1R0-30YLE.pdf MOSFETs SOT669 N-CH 30V 275A
auf Bestellung 1764 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.77 EUR
10+3.08 EUR
100+2.13 EUR
500+1.78 EUR
1000+1.65 EUR
Im Einkaufswagen  Stück im Wert von  UAH