Produkte > NEXPERIA > PSMN1R0-80CSEJ
PSMN1R0-80CSEJ

PSMN1R0-80CSEJ Nexperia

PSMN1R0-80CSE.pdf
Hersteller: Nexperia
MOSFETs SOT8005 N-CH 80V 495A
auf Bestellung 172 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+16.14 EUR
10+12.62 EUR
100+10.52 EUR
500+9.8 EUR
1000+8.32 EUR
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details PSMN1R0-80CSEJ Nexperia

Description: PSMN1R0-80CSE/SOT8005A/CCPAK12, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: CCPAK1212i, Vgs(th) (Max) @ Id: 3.6V @ 1mA, Power Dissipation (Max): 1.55kW (Tc), Rds On (Max) @ Id, Vgs: 0.95Ohm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 495A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 36802 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 504 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V.

Weitere Produktangebote PSMN1R0-80CSEJ nach Preis ab 10.55 EUR bis 20.43 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
PSMN1R0-80CSEJ PSMN1R0-80CSEJ Hersteller : Nexperia USA Inc. PSMN1R0-80CSE.pdf Description: PSMN1R0-80CSE/SOT8005A/CCPAK12
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 1.55kW (Tc)
Rds On (Max) @ Id, Vgs: 0.95Ohm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 36802 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 504 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: CCPAK1212i
auf Bestellung 104 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+20.43 EUR
10+14.12 EUR
50+11.42 EUR
100+10.55 EUR
Im Einkaufswagen  Stück im Wert von  UAH
PSMN1R0-80CSEJ PSMN1R0-80CSEJ Hersteller : Nexperia USA Inc. PSMN1R0-80CSE.pdf Description: PSMN1R0-80CSE/SOT8005A/CCPAK12
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: CCPAK1212i
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 1.55kW (Tc)
Rds On (Max) @ Id, Vgs: 0.95Ohm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 36802 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 504 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH