PSMN1R1-30YLEX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: PSMN1R1-30YLE/SOT669/LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 265A (Ta)
Rds On (Max) @ Id, Vgs: 1.26mOhm @ 25A, 10V
Power Dissipation (Max): 192W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 2mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6317 pF @ 15 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1500+ | 2.11 EUR |
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Technische Details PSMN1R1-30YLEX Nexperia USA Inc.
Description: PSMN1R1-30YLE/SOT669/LFPAK, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 265A (Ta), Rds On (Max) @ Id, Vgs: 1.26mOhm @ 25A, 10V, Power Dissipation (Max): 192W (Ta), Vgs(th) (Max) @ Id: 2.2V @ 2mA, Supplier Device Package: LFPAK56, Power-SO8, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6317 pF @ 15 V.
Weitere Produktangebote PSMN1R1-30YLEX nach Preis ab 1.7 EUR bis 4.29 EUR
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PSMN1R1-30YLEX | Hersteller : Nexperia |
MOSFET PSMN1R1-30YLE/SOT669/LFPAK |
auf Bestellung 1917 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN1R1-30YLEX | Hersteller : Nexperia USA Inc. |
Description: PSMN1R1-30YLE/SOT669/LFPAK Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 265A (Ta) Rds On (Max) @ Id, Vgs: 1.26mOhm @ 25A, 10V Power Dissipation (Max): 192W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 2mA Supplier Device Package: LFPAK56, Power-SO8 Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6317 pF @ 15 V |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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