Weitere Produktangebote PSMN1R2-25YL,115 nach Preis ab 1.03 EUR bis 4.66 EUR
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PSMN1R2-25YL,115 | Nexperia |
 Trans MOSFET N-CH 25V 100A 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 1708 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN1R2-25YL,115 | Nexperia |
Trans MOSFET N-CH 25V 100A 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 1708 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN1R2-25YL,115 | Nexperia |
Trans MOSFET N-CH 25V 100A 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN1R2-25YL,115 | Nexperia |
Trans MOSFET N-CH 25V 100A 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 420 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN1R2-25YL,115 | Nexperia |
MOSFETs SOT1023 N-CH 25V 100A |
auf Bestellung 19504 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN1R2-25YL,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 25V 100A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 15A, 10V Power Dissipation (Max): 121W (Tc) Vgs(th) (Max) @ Id: 2.15V @ 1mA Supplier Device Package: LFPAK56; Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6380 pF @ 12 V |
auf Bestellung 1998 Stücke: Lieferzeit 10-14 Tag (e) |
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| PSMN1R2-25YL,115 |
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Hersteller: Nexperia
Trans MOSFET N-CH 25V 100A 5-Pin(4+Tab) LFPAK T/R
Trans MOSFET N-CH 25V 100A 5-Pin(4+Tab) LFPAK T/R
auf Bestellung 1708 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 73+ | 2.03 EUR |
| 100+ | 1.58 EUR |
| 250+ | 1.51 EUR |
| 500+ | 1.31 EUR |
| 1000+ | 1.07 EUR |
| PSMN1R2-25YL,115 |
|
Hersteller: Nexperia
Trans MOSFET N-CH 25V 100A 5-Pin(4+Tab) LFPAK T/R
Trans MOSFET N-CH 25V 100A 5-Pin(4+Tab) LFPAK T/R
auf Bestellung 1708 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 73+ | 2.03 EUR |
| PSMN1R2-25YL,115 |
|
Hersteller: Nexperia
Trans MOSFET N-CH 25V 100A 5-Pin(4+Tab) LFPAK T/R
Trans MOSFET N-CH 25V 100A 5-Pin(4+Tab) LFPAK T/R
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 62+ | 2.73 EUR |
| 100+ | 1.92 EUR |
| 500+ | 1.55 EUR |
| 1500+ | 1.03 EUR |
| PSMN1R2-25YL,115 |
|
Hersteller: Nexperia
Trans MOSFET N-CH 25V 100A 5-Pin(4+Tab) LFPAK T/R
Trans MOSFET N-CH 25V 100A 5-Pin(4+Tab) LFPAK T/R
auf Bestellung 420 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 198+ | 2.78 EUR |
| PSMN1R2-25YL,115 |
|
Hersteller: Nexperia
MOSFETs SOT1023 N-CH 25V 100A
MOSFETs SOT1023 N-CH 25V 100A
auf Bestellung 19504 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 2.89 EUR |
| 10+ | 2.06 EUR |
| 100+ | 1.76 EUR |
| 1000+ | 1.71 EUR |
| 1500+ | 1.41 EUR |
| PSMN1R2-25YL,115 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 15A, 10V
Power Dissipation (Max): 121W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56; Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6380 pF @ 12 V
Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 15A, 10V
Power Dissipation (Max): 121W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56; Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6380 pF @ 12 V
auf Bestellung 1998 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.66 EUR |
| 10+ | 3.03 EUR |
| 100+ | 2.1 EUR |
| 500+ | 1.77 EUR |