PSMN1R2-55SLHX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: N-CHANNEL 55 V, 1.03 MOHM, 330 A
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330A (Tc)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
auf Bestellung 1631 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 11.62 EUR |
| 10+ | 7.84 EUR |
| 100+ | 5.71 EUR |
| 500+ | 4.8 EUR |
| 1000+ | 4.79 EUR |
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Technische Details PSMN1R2-55SLHX Nexperia USA Inc.
Description: N-CHANNEL 55 V, 1.03 MOHM, 330 A, Packaging: Tape & Reel (TR), Package / Case: SOT-1235, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 330A (Tc), Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 1mA, Supplier Device Package: LFPAK88 (SOT1235), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V.
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PSMN1R2-55SLHX | Hersteller : Nexperia USA Inc. |
Description: N-CHANNEL 55 V, 1.03 MOHM, 330 A Packaging: Tape & Reel (TR) Package / Case: SOT-1235 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 330A (Tc) Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK88 (SOT1235) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V |
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