PSMN1R2-80CSEJ Nexperia
Hersteller: NexperiaMOSFETs N-channel, 80 V, 1.3 mOhm, MOSFET with enhanced SOA in CCPAK1212i package
auf Bestellung 150 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 11.55 EUR |
| 10+ | 8.54 EUR |
| 100+ | 6.9 EUR |
| 500+ | 6.18 EUR |
| 1000+ | 5.23 EUR |
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Technische Details PSMN1R2-80CSEJ Nexperia
Description: N-CHANNEL, 80 V, 1.18 MOHM, MOSF, Packaging: Tape & Reel (TR), Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 375A (Ta), Rds On (Max) @ Id, Vgs: 1.18mOhm @ 25A, 10V, Power Dissipation (Max): 935W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 1mA, Supplier Device Package: CCPAK1212i, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 26187 pF @ 40 V.
Weitere Produktangebote PSMN1R2-80CSEJ
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PSMN1R2-80CSEJ | Hersteller : Nexperia USA Inc. |
Description: N-CHANNEL, 80 V, 1.18 MOHM, MOSF Packaging: Tape & Reel (TR) Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 375A (Ta) Rds On (Max) @ Id, Vgs: 1.18mOhm @ 25A, 10V Power Dissipation (Max): 935W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: CCPAK1212i Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 26187 pF @ 40 V |
Produkt ist nicht verfügbar |
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PSMN1R2-80CSEJ | Hersteller : Nexperia USA Inc. |
Description: N-CHANNEL, 80 V, 1.18 MOHM, MOSF Packaging: Cut Tape (CT) Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 375A (Ta) Rds On (Max) @ Id, Vgs: 1.18mOhm @ 25A, 10V Power Dissipation (Max): 935W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: CCPAK1212i Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 26187 pF @ 40 V |
Produkt ist nicht verfügbar |