| Anzahl | Preis |
|---|---|
| 1+ | 12 EUR |
| 10+ | 8.73 EUR |
| 100+ | 7.29 EUR |
| 500+ | 6.74 EUR |
| 1000+ | 5.7 EUR |
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Technische Details PSMN1R3-100ASFJ Nexperia
Description: NEXTPOWER 100 V, 1.3 MOHM, N-CHA, Packaging: Tape & Reel (TR), Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 400A (Ta), Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V, Power Dissipation (Max): 1.071kW (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: CCPAK1212, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 248 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 17737 pF @ 50 V.
Weitere Produktangebote PSMN1R3-100ASFJ nach Preis ab 6.36 EUR bis 12.06 EUR
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PSMN1R3-100ASFJ | Hersteller : Nexperia USA Inc. |
 Description: NEXTPOWER 100 V, 1.3 MOHM, N-CHAPackaging: Cut Tape (CT) Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400A (Ta) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V Power Dissipation (Max): 1.071kW (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: CCPAK1212 Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 248 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17737 pF @ 50 V |
auf Bestellung 517 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN1R3-100ASFJ | Hersteller : Nexperia USA Inc. |
Description: NEXTPOWER 100 V, 1.3 MOHM, N-CHA Packaging: Tape & Reel (TR) Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400A (Ta) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V Power Dissipation (Max): 1.071kW (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: CCPAK1212 Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 248 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17737 pF @ 50 V |
Produkt ist nicht verfügbar |