PSMN1R3-80SSFJ Nexperia
| Anzahl | Privatkunde |
|---|---|
| 1+ | 12.02 EUR |
| 10+ | 8.08 EUR |
| 100+ | 6.01 EUR |
| 500+ | 5.89 EUR |
| 1000+ | 5.82 EUR |
| 2000+ | 5.49 EUR |
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Technische Details PSMN1R3-80SSFJ Nexperia
Description: NEXTPOWER 80 V, 1.2 MOHM, 335 AM, Packaging: Tape & Reel (TR), Package / Case: SOT-1235, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 335A (Tc), Rds On (Max) @ Id, Vgs: 1.2mOhm @ 25A, 10V, Power Dissipation (Max): 341W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: LFPAK88 (SOT1235), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 246 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 16647 pF @ 40 V.
Weitere Produktangebote PSMN1R3-80SSFJ nach Preis ab 5.82 EUR bis 12.67 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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PSMN1R3-80SSFJ | Nexperia USA Inc. |
 Description: NEXTPOWER 80 V, 1.2 MOHM, 335 AMPackaging: Cut Tape (CT) Package / Case: SOT-1235 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 335A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 25A, 10V Power Dissipation (Max): 341W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK88 (SOT1235) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 246 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16647 pF @ 40 V |
auf Bestellung 1914 Stücke: Lieferzeit 10-14 Tag (e) |
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| PSMN1R3-80SSFJ |
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Hersteller: Nexperia USA Inc.
Description: NEXTPOWER 80 V, 1.2 MOHM, 335 AM
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 335A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 25A, 10V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 246 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16647 pF @ 40 V
Description: NEXTPOWER 80 V, 1.2 MOHM, 335 AM
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 335A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 25A, 10V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 246 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16647 pF @ 40 V
auf Bestellung 1914 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.67 EUR |
| 10+ | 8.52 EUR |
| 100+ | 6.18 EUR |
| 500+ | 5.82 EUR |