PSMN1R4-100CSEJ Nexperia
Hersteller: NexperiaMOSFETs N-channel, 100 V, 1.42 mOhm, MOSFET with enhanced SOA in CCPAK1212i package
auf Bestellung 196 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 11.77 EUR |
| 10+ | 8.32 EUR |
| 100+ | 6.93 EUR |
| 500+ | 6.42 EUR |
| 1000+ | 5.44 EUR |
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Technische Details PSMN1R4-100CSEJ Nexperia
Description: N-CHANNEL, 100 V, 1.42 MOHM, MOS, Packaging: Tape & Reel (TR), Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 340A (Tc), Rds On (Max) @ Id, Vgs: 1.42mOhm @ 25A, 10V, Power Dissipation (Max): 935W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 1mA, Supplier Device Package: CCPAK1212i, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 366 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 26023 pF @ 50 V.
Weitere Produktangebote PSMN1R4-100CSEJ
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PSMN1R4-100CSEJ | Hersteller : Nexperia USA Inc. |
Description: N-CHANNEL, 100 V, 1.42 MOHM, MOS Packaging: Tape & Reel (TR) Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 340A (Tc) Rds On (Max) @ Id, Vgs: 1.42mOhm @ 25A, 10V Power Dissipation (Max): 935W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: CCPAK1212i Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 366 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 26023 pF @ 50 V |
Produkt ist nicht verfügbar |
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PSMN1R4-100CSEJ | Hersteller : Nexperia USA Inc. |
Description: N-CHANNEL, 100 V, 1.42 MOHM, MOS Packaging: Cut Tape (CT) Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 340A (Tc) Rds On (Max) @ Id, Vgs: 1.42mOhm @ 25A, 10V Power Dissipation (Max): 935W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: CCPAK1212i Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 366 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 26023 pF @ 50 V |
Produkt ist nicht verfügbar |