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PSMN1R4-40YSHX

PSMN1R4-40YSHX Nexperia


PSMN1R4-40YSH.pdf
Hersteller: Nexperia
MOSFETs SOT1023 N-CH 40V 240A
auf Bestellung 1460 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.48 EUR
10+2.32 EUR
100+1.62 EUR
500+1.3 EUR
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Technische Details PSMN1R4-40YSHX Nexperia

Description: NEXTPOWERS3 MOSFETS, Input Capacitance (Ciss) (Max) @ Vds: 7523 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 3.6V @ 1mA, Power Dissipation (Max): 333W (Tc), Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 240A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-1023, 4-LFPAK, Packaging: Tape & Reel (TR).

Weitere Produktangebote PSMN1R4-40YSHX nach Preis ab 1.87 EUR bis 4.26 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
PSMN1R4-40YSHX PSMN1R4-40YSHX Hersteller : Nexperia USA Inc. PSMN1R4-40YSH.pdf Description: NEXTPOWERS3 MOSFETS
Input Capacitance (Ciss) (Max) @ Vds: 7523 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 333W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Cut Tape (CT)
auf Bestellung 1458 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.26 EUR
10+2.74 EUR
50+2.08 EUR
100+1.87 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
PSMN1R4-40YSHX PSMN1R4-40YSHX Hersteller : Nexperia USA Inc. PSMN1R4-40YSH.pdf Description: NEXTPOWERS3 MOSFETS
Input Capacitance (Ciss) (Max) @ Vds: 7523 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 333W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Tape & Reel (TR)
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Im Einkaufswagen  Stück im Wert von  UAH