auf Bestellung 1460 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 2.69 EUR |
10+ | 2.24 EUR |
100+ | 1.78 EUR |
250+ | 1.65 EUR |
500+ | 1.49 EUR |
1500+ | 1.28 EUR |
3000+ | 1.23 EUR |
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Technische Details PSMN1R4-40YSHX Nexperia
Description: NEXTPOWERS3 MOSFETS, Packaging: Tape & Reel (TR), Package / Case: SOT-1023, 4-LFPAK, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 240A (Ta), Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V, Power Dissipation (Max): 333W (Ta), Vgs(th) (Max) @ Id: 3.6V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7523 pF @ 20 V.
Weitere Produktangebote PSMN1R4-40YSHX nach Preis ab 1.25 EUR bis 2.64 EUR
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PSMN1R4-40YSHX | Hersteller : Nexperia USA Inc. |
Description: NEXTPOWERS3 MOSFETS Packaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Ta) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V Power Dissipation (Max): 333W (Ta) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7523 pF @ 20 V |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN1R4-40YSHX | Hersteller : Nexperia USA Inc. |
Description: NEXTPOWERS3 MOSFETS Packaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Ta) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V Power Dissipation (Max): 333W (Ta) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7523 pF @ 20 V |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN1R4-40YSHX | Hersteller : NEXPERIA | N-Channel 40 V, 1.4 mOhm, 240 A Standard Level MOSFET |
Produkt ist nicht verfügbar |