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PSMN1R4-40YSHX

PSMN1R4-40YSHX Nexperia


PSMN1R4_40YSH-3372604.pdf Hersteller: Nexperia
MOSFET MOSFET PSMN1R4-40YSH/SOT1023
auf Bestellung 1460 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.69 EUR
10+ 2.24 EUR
100+ 1.78 EUR
250+ 1.65 EUR
500+ 1.49 EUR
1500+ 1.28 EUR
3000+ 1.23 EUR
Mindestbestellmenge: 2
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Technische Details PSMN1R4-40YSHX Nexperia

Description: NEXTPOWERS3 MOSFETS, Packaging: Tape & Reel (TR), Package / Case: SOT-1023, 4-LFPAK, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 240A (Ta), Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V, Power Dissipation (Max): 333W (Ta), Vgs(th) (Max) @ Id: 3.6V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7523 pF @ 20 V.

Weitere Produktangebote PSMN1R4-40YSHX nach Preis ab 1.25 EUR bis 2.64 EUR

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Preis ohne MwSt
PSMN1R4-40YSHX Hersteller : Nexperia USA Inc. PSMN1R4-40YSH.pdf Description: NEXTPOWERS3 MOSFETS
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Ta)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V
Power Dissipation (Max): 333W (Ta)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7523 pF @ 20 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1500+1.25 EUR
Mindestbestellmenge: 1500
PSMN1R4-40YSHX Hersteller : Nexperia USA Inc. PSMN1R4-40YSH.pdf Description: NEXTPOWERS3 MOSFETS
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Ta)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V
Power Dissipation (Max): 333W (Ta)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7523 pF @ 20 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.64 EUR
10+ 2.19 EUR
100+ 1.74 EUR
500+ 1.48 EUR
Mindestbestellmenge: 7
PSMN1R4-40YSHX Hersteller : NEXPERIA psmn1r4-40ysh.pdf N-Channel 40 V, 1.4 mOhm, 240 A Standard Level MOSFET
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