Technische Details PSMN1R5-40ES,127 Nexperia
Description: MOSFET N-CH 40V 120A I2PAK, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V, Power Dissipation (Max): 338W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: I2PAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9710 pF @ 20 V.
Weitere Produktangebote PSMN1R5-40ES,127
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| PSMN1R5-40ES,127 | Hersteller : NEXPERIA |
 Description: NEXPERIA - PSMN1R5-40ES,127 - MISCELLANEOUS MOSFETStariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: Lead (27-Jun-2024) |
auf Bestellung 7345 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN1R5-40ES,127 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 40V 120A 3-Pin(3+Tab) I2PAK Rail |
Produkt ist nicht verfügbar |
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PSMN1R5-40ES,127 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 40V 120A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V Power Dissipation (Max): 338W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: I2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9710 pF @ 20 V |
Produkt ist nicht verfügbar |