PSMN1R5-40YSDX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 240A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 7752 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 238W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 1500+ | 1.24 EUR |
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Technische Details PSMN1R5-40YSDX Nexperia USA Inc.
Description: MOSFET N-CH 40V 240A LFPAK56, Input Capacitance (Ciss) (Max) @ Vds: 7752 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 3.6V @ 1mA, Power Dissipation (Max): 238W (Tc), FET Feature: Schottky Diode (Body), Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 240A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR).
Weitere Produktangebote PSMN1R5-40YSDX nach Preis ab 1.04 EUR bis 3.98 EUR
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PSMN1R5-40YSDX | Hersteller : Nexperia |
MOSFETs SOT669 N-CH 40V 240A |
auf Bestellung 1311 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN1R5-40YSDX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 40V 240A LFPAK56 Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 3.6V @ 1mA Power Dissipation (Max): 238W (Tc) FET Feature: Schottky Diode (Body) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 7752 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active |
auf Bestellung 3896 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN1R5-40YSDX | Hersteller : Nexperia |
Trans MOSFET N-CH 40V 240A 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
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| PSMN1R5-40YSDX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 202A; Idm: 1145A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 202A Pulsed drain current: 1145A Power dissipation: 238W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 2.9mΩ Mounting: SMD Gate charge: 99nC Kind of package: reel; tape Kind of channel: enhancement Technology: NextPowerS3 |
Produkt ist nicht verfügbar |