PSMN1R5-40YSDX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 40V 240A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7752 pF @ 20 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1500+ | 1.17 EUR |
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Technische Details PSMN1R5-40YSDX Nexperia USA Inc.
Description: MOSFET N-CH 40V 240A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 240A (Tc), Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V, FET Feature: Schottky Diode (Body), Power Dissipation (Max): 238W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7752 pF @ 20 V.
Weitere Produktangebote PSMN1R5-40YSDX nach Preis ab 1.13 EUR bis 4.12 EUR
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PSMN1R5-40YSDX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 40V 240A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 238W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7752 pF @ 20 V |
auf Bestellung 4003 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN1R5-40YSDX | Hersteller : Nexperia |
MOSFETs SOT669 N-CH 40V 240A |
auf Bestellung 1848 Stücke: Lieferzeit 10-14 Tag (e) |
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| PSMN1R5-40YSDX | Hersteller : NEXPERIA |
N-Channel 40 V, 190 A Standard level MOSFET |
Produkt ist nicht verfügbar |
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| PSMN1R5-40YSDX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 202A; Idm: 1145A Case: LFPAK56; PowerSO8; SOT669 Technology: NextPowerS3 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 99nC On-state resistance: 2.9mΩ Gate-source voltage: ±20V Drain-source voltage: 40V Drain current: 202A Power dissipation: 238W Pulsed drain current: 1145A Kind of channel: enhancement |
Produkt ist nicht verfügbar |