PSMN1R5-40YSDX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 40V 240A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Ta)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 238W (Ta)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7752 pF @ 20 V
auf Bestellung 1408 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 4.07 EUR |
| 10+ | 3.65 EUR |
| 100+ | 2.94 EUR |
| 500+ | 2.41 EUR |
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Technische Details PSMN1R5-40YSDX Nexperia USA Inc.
Description: MOSFET N-CH 40V 240A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 240A (Ta), Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V, FET Feature: Schottky Diode (Body), Power Dissipation (Max): 238W (Ta), Vgs(th) (Max) @ Id: 3.6V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7752 pF @ 20 V.
Weitere Produktangebote PSMN1R5-40YSDX nach Preis ab 1.45 EUR bis 4.29 EUR
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PSMN1R5-40YSDX | Hersteller : Nexperia |
MOSFETs PSMN1R5-40YSD/SOT669/LFPAK |
auf Bestellung 2134 Stücke: Lieferzeit 10-14 Tag (e) |
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| PSMN1R5-40YSDX | Hersteller : NEXPERIA |
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| PSMN1R5-40YSDX | Hersteller : NEXPERIA |
PSMN1R5-40YSDX SMD N channel transistors |
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PSMN1R5-40YSDX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 40V 240A LFPAK56 Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Ta) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 238W (Ta) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7752 pF @ 20 V |
Produkt ist nicht verfügbar |