| Anzahl | Preis |
|---|---|
| 1+ | 3.38 EUR |
| 10+ | 2.15 EUR |
| 100+ | 1.45 EUR |
| 500+ | 1.17 EUR |
| 1000+ | 1.05 EUR |
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Technische Details PSMN1R6-25YLEX Nexperia
Description: PSMN1R6-25YLE/SOT669/LFPAK, Input Capacitance (Ciss) (Max) @ Vds: 3698 pF @ 12 V, Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Part Status: Active, Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 2.2V @ 1mA, Power Dissipation (Max): 124W (Tc), Rds On (Max) @ Id, Vgs: 1.88mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 185A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR).
Weitere Produktangebote PSMN1R6-25YLEX nach Preis ab 1.44 EUR bis 4.08 EUR
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PSMN1R6-25YLEX | Hersteller : Nexperia USA Inc. |
 Description: PSMN1R6-25YLE/SOT669/LFPAKInput Capacitance (Ciss) (Max) @ Vds: 3698 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 2.2V @ 1mA Power Dissipation (Max): 124W (Tc) Rds On (Max) @ Id, Vgs: 1.88mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 185A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Cut Tape (CT) |
auf Bestellung 1490 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN1R6-25YLEX | Hersteller : Nexperia USA Inc. |
Description: PSMN1R6-25YLE/SOT669/LFPAK Input Capacitance (Ciss) (Max) @ Vds: 3698 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 2.2V @ 1mA Power Dissipation (Max): 124W (Tc) Rds On (Max) @ Id, Vgs: 1.88mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 185A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |