PSMN1R6-25YLEX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: PSMN1R6-25YLE/SOT669/LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 185A (Ta)
Rds On (Max) @ Id, Vgs: 1.88mOhm @ 25A, 10V
Power Dissipation (Max): 124W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3698 pF @ 12 V
Description: PSMN1R6-25YLE/SOT669/LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 185A (Ta)
Rds On (Max) @ Id, Vgs: 1.88mOhm @ 25A, 10V
Power Dissipation (Max): 124W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3698 pF @ 12 V
auf Bestellung 1490 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
7+ | 3.87 EUR |
10+ | 3.22 EUR |
100+ | 2.56 EUR |
500+ | 2.17 EUR |
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Technische Details PSMN1R6-25YLEX Nexperia USA Inc.
Description: PSMN1R6-25YLE/SOT669/LFPAK, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 185A (Ta), Rds On (Max) @ Id, Vgs: 1.88mOhm @ 25A, 10V, Power Dissipation (Max): 124W (Ta), Vgs(th) (Max) @ Id: 2.2V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3698 pF @ 12 V.
Weitere Produktangebote PSMN1R6-25YLEX nach Preis ab 1.81 EUR bis 3.93 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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PSMN1R6-25YLEX | Hersteller : Nexperia | MOSFET PSMN1R6-25YLE/SOT669/LFPAK |
auf Bestellung 1692 Stücke: Lieferzeit 14-28 Tag (e) |
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PSMN1R6-25YLEX | Hersteller : Nexperia USA Inc. |
Description: PSMN1R6-25YLE/SOT669/LFPAK Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 185A (Ta) Rds On (Max) @ Id, Vgs: 1.88mOhm @ 25A, 10V Power Dissipation (Max): 124W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3698 pF @ 12 V |
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