PSMN1R6-30PL,127 Nexperia
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 286+ | 1.9 EUR |
| 500+ | 1.76 EUR |
| 1000+ | 1.6 EUR |
Produktrezensionen
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Technische Details PSMN1R6-30PL,127 Nexperia
Description: MOSFET N-CH 30V 100A TO220AB, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 25A, 10V, Power Dissipation (Max): 306W (Tc), Vgs(th) (Max) @ Id: 2.15V @ 1mA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12493 pF @ 12 V.
Weitere Produktangebote PSMN1R6-30PL,127 nach Preis ab 2.12 EUR bis 3.16 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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PSMN1R6-30PL,127 | Hersteller : Nexperia USA Inc. |
 Description: MOSFET N-CH 30V 100A TO220ABPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 25A, 10V Power Dissipation (Max): 306W (Tc) Vgs(th) (Max) @ Id: 2.15V @ 1mA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12493 pF @ 12 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PSMN1R6-30PL,127 | Hersteller : NXP Semiconductors |
Trans MOSFET N-CH 30V 100A 3-Pin(3+Tab) TO-220AB Rail |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| PSMN1R6-30PL,127 | Hersteller : NXP Semiconductors |
Trans MOSFET N-CH 30V 100A 3-Pin(3+Tab) TO-220AB Rail |
auf Bestellung 689 Stücke: Lieferzeit 14-21 Tag (e) |
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| PSMN1R6-30PL,127 | Hersteller : NXP Semiconductors |
Trans MOSFET N-CH 30V 100A 3-Pin(3+Tab) TO-220AB Rail |
auf Bestellung 8735 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN1R6-30PL,127 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 30V 100A 3-Pin(3+Tab) TO-220AB Rail |
Produkt ist nicht verfügbar |
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PSMN1R6-30PL,127 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 100A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 25A, 10V Power Dissipation (Max): 306W (Tc) Vgs(th) (Max) @ Id: 2.15V @ 1mA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12493 pF @ 12 V |
Produkt ist nicht verfügbar |
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| PSMN1R6-30PL,127 | Hersteller : Nexperia |
MOSFET N-CH 30V 1.7 mOhm Logic Level MOSFET |
Produkt ist nicht verfügbar |