PSMN1R8-30MLHX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 30V 150A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 25A, 10V
Power Dissipation (Max): 106W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3125 pF @ 15 V
auf Bestellung 19500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1500+ | 1.25 EUR |
| 3000+ | 1.18 EUR |
| 7500+ | 1.12 EUR |
| 10500+ | 1.07 EUR |
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Technische Details PSMN1R8-30MLHX Nexperia USA Inc.
Description: MOSFET N-CH 30V 150A LFPAK33, Packaging: Tape & Reel (TR), Package / Case: SOT-1210, 8-LFPAK33 (5-Lead), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 150A (Ta), Rds On (Max) @ Id, Vgs: 2.1mOhm @ 25A, 10V, Power Dissipation (Max): 106W (Ta), Vgs(th) (Max) @ Id: 2.2V @ 1mA, Supplier Device Package: LFPAK33, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3125 pF @ 15 V.
Weitere Produktangebote PSMN1R8-30MLHX nach Preis ab 0.96 EUR bis 2.85 EUR
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PSMN1R8-30MLHX | Hersteller : Nexperia |
MOSFET PSMN1R8-30MLH/SOT1210/mLFPAK |
auf Bestellung 5018 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN1R8-30MLHX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 150A LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Ta) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 25A, 10V Power Dissipation (Max): 106W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3125 pF @ 15 V |
auf Bestellung 20992 Stücke: Lieferzeit 10-14 Tag (e) |
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| PSMN1R8-30MLHX | Hersteller : NEXPERIA |
Trans MOSFET N-CH 30V 150A 8-Pin LFPAK EP T/R |
Produkt ist nicht verfügbar |
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| PSMN1R8-30MLHX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 110A; Idm: 624A Type of transistor: N-MOSFET Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 110A Pulsed drain current: 624A Power dissipation: 106W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 5.3mΩ Mounting: SMD Gate charge: 58nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PSMN1R8-30MLHX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 110A; Idm: 624A Type of transistor: N-MOSFET Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 110A Pulsed drain current: 624A Power dissipation: 106W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 5.3mΩ Mounting: SMD Gate charge: 58nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |