Produkte > NEXPERIA > PSMN1R8-80SSFJ
PSMN1R8-80SSFJ

PSMN1R8-80SSFJ Nexperia

PSMN1R8-80SSF.pdf
Hersteller: Nexperia
MOSFETs The factory is currently not accepting orders for this product.
auf Bestellung 1007 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+11.51 EUR
10+7.55 EUR
100+6.74 EUR
1000+6.35 EUR
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details PSMN1R8-80SSFJ Nexperia

Description: NEXTPOWER 80/100V MOSFETS, Packaging: Tape & Reel (TR), Package / Case: SOT-1235, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 270A (Tc), Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V, Power Dissipation (Max): 341W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: LFPAK88 (SOT1235), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 222 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 15319 pF @ 40 V.

Weitere Produktangebote PSMN1R8-80SSFJ nach Preis ab 7.21 EUR bis 14.4 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
PSMN1R8-80SSFJ PSMN1R8-80SSFJ Hersteller : Nexperia USA Inc. PSMN1R8-80SSF.pdf Description: NEXTPOWER 80/100V MOSFETS
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 222 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15319 pF @ 40 V
auf Bestellung 1563 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.4 EUR
10+9.81 EUR
50+7.84 EUR
100+7.21 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
PSMN1R8-80SSFJ PSMN1R8-80SSFJ Hersteller : Nexperia USA Inc. PSMN1R8-80SSF.pdf Description: NEXTPOWER 80/100V MOSFETS
Packaging: Tape & Reel (TR)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 222 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15319 pF @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMN1R8-80SSFJ Hersteller : NEXPERIA PSMN1R8-80SSF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 205A; Idm: 1158A; 341W
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 222nC
On-state resistance: 4.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 341W
Drain current: 205A
Pulsed drain current: 1158A
Case: LFPAK88; SOT1235
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH