auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.93 EUR |
| 10+ | 4.86 EUR |
| 50+ | 4.82 EUR |
| 100+ | 3.66 EUR |
| 2500+ | 3.64 EUR |
| 5000+ | 3.56 EUR |
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Technische Details PSMN1R9-40PLQ Nexperia
Description: MOSFET N-CH 40V 150A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 150A (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 25A, 10V, Power Dissipation (Max): 349W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V.
Weitere Produktangebote PSMN1R9-40PLQ nach Preis ab 3.70 EUR bis 7.87 EUR
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PSMN1R9-40PLQ | Hersteller : Nexperia USA Inc. |
 Description: MOSFET N-CH 40V 150A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 25A, 10V Power Dissipation (Max): 349W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V |
auf Bestellung 467 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN1R9-40PLQ | Hersteller : NEXPERIA |
Trans MOSFET N-CH 40V 150A 3-Pin(3+Tab) TO-220AB Rail |
Produkt ist nicht verfügbar |
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| PSMN1R9-40PLQ | Hersteller : NEXPERIA |
PSMN1R9-40PLQ THT N channel transistors |
Produkt ist nicht verfügbar |
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PSMN1R9-40PLQ | Hersteller : Nexperia |
Trans MOSFET N-CH 40V 150A 3-Pin(3+Tab) TO-220AB Rail |
Produkt ist nicht verfügbar |