PSMN1R9-40PLQ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 40V 150A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 25A, 10V
Power Dissipation (Max): 349W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 5.74 EUR |
| 10+ | 4.82 EUR |
| 100+ | 3.9 EUR |
| 500+ | 3.47 EUR |
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Technische Details PSMN1R9-40PLQ Nexperia USA Inc.
Description: MOSFET N-CH 40V 150A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 150A (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 25A, 10V, Power Dissipation (Max): 349W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V.
Weitere Produktangebote PSMN1R9-40PLQ nach Preis ab 4.47 EUR bis 9.26 EUR
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PSMN1R9-40PLQ | Hersteller : Nexperia |
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auf Bestellung 181 Stücke: Lieferzeit 14-28 Tag (e) |
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| PSMN1R9-40PLQ | Hersteller : NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 150A; Idm: 1332A; 349W Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 40V Drain current: 150A Pulsed drain current: 1332A Power dissipation: 349W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 3.15mΩ Mounting: THT Gate charge: 230nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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| PSMN1R9-40PLQ | Hersteller : NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 150A; Idm: 1332A; 349W Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 40V Drain current: 150A Pulsed drain current: 1332A Power dissipation: 349W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 3.15mΩ Mounting: THT Gate charge: 230nC Kind of package: tube Kind of channel: enhanced |
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