PSMN1R9-40YSBX Nexperia

Description: PSMN1R9-40YSB/SOT669/LFPAK, Input Capacitance (Ciss) (Max) @ Vds: 6297 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 3.6V @ 1mA, Power Dissipation (Max): 194W (Tc), FET Feature: Schottky Diode (Body), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 200A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR).