| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.88 EUR |
| 10+ | 2.48 EUR |
| 100+ | 1.67 EUR |
| 500+ | 1.33 EUR |
| 1000+ | 1.13 EUR |
| 1500+ | 1.06 EUR |
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Technische Details PSMN1R9-40YSBX Nexperia
Description: PSMN1R9-40YSB/SOT669/LFPAK, Input Capacitance (Ciss) (Max) @ Vds: 6297 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 3.6V @ 1mA, Power Dissipation (Max): 194W (Tc), FET Feature: Schottky Diode (Body), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 200A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR).
Weitere Produktangebote PSMN1R9-40YSBX nach Preis ab 1.37 EUR bis 4 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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PSMN1R9-40YSBX | Nexperia USA Inc. |
 Description: PSMN1R9-40YSB/SOT669/LFPAKSupplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 3.6V @ 1mA Power Dissipation (Max): 194W (Tc) FET Feature: Schottky Diode (Body) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 6297 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V |
auf Bestellung 1480 Stücke: Lieferzeit 10-14 Tag (e) |
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| PSMN1R9-40YSBX |
|
Hersteller: Nexperia USA Inc.
Description: PSMN1R9-40YSB/SOT669/LFPAK
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 194W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6297 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Description: PSMN1R9-40YSB/SOT669/LFPAK
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 194W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6297 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 1480 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 4 EUR |
| 10+ | 2.55 EUR |
| 50+ | 1.93 EUR |
| 100+ | 1.73 EUR |
| 500+ | 1.37 EUR |