Technische Details PSMN2R0-100SSFJ Nexperia
Description: NEXTPOWER 80/100V MOSFETS, Packaging: Tape & Reel (TR), Package / Case: SOT-1235, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 267A (Tc), Rds On (Max) @ Id, Vgs: 2.07mOhm @ 25A, 10V, Power Dissipation (Max): 341W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: LFPAK88 (SOT1235), Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 242 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 16140 pF @ 50 V.
Weitere Produktangebote PSMN2R0-100SSFJ nach Preis ab 4.24 EUR bis 11.19 EUR
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PSMN2R0-100SSFJ | Hersteller : Nexperia |
 Trans MOSFET N-CH 100V 267A 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN2R0-100SSFJ | Hersteller : Nexperia |
MOSFETs The factory is currently not accepting orders for this product. |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN2R0-100SSFJ | Hersteller : Nexperia USA Inc. |
Description: NEXTPOWER 80/100V MOSFETS Packaging: Tape & Reel (TR) Package / Case: SOT-1235 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 267A (Tc) Rds On (Max) @ Id, Vgs: 2.07mOhm @ 25A, 10V Power Dissipation (Max): 341W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK88 (SOT1235) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 242 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16140 pF @ 50 V |
Produkt ist nicht verfügbar |
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PSMN2R0-100SSFJ | Hersteller : Nexperia USA Inc. |
Description: NEXTPOWER 80/100V MOSFETS Packaging: Cut Tape (CT) Package / Case: SOT-1235 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 267A (Tc) Rds On (Max) @ Id, Vgs: 2.07mOhm @ 25A, 10V Power Dissipation (Max): 341W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK88 (SOT1235) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 242 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16140 pF @ 50 V |
Produkt ist nicht verfügbar |
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| PSMN2R0-100SSFJ | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 189A; Idm: 1070A; 341W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 189A Pulsed drain current: 1070A Power dissipation: 341W Case: LFPAK88; SOT1235 Gate-source voltage: ±20V On-state resistance: 4.8mΩ Mounting: SMD Gate charge: 242nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |