auf Bestellung 15375 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 409+ | 0.36 EUR |
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Technische Details PSMN2R0-25YLDX Nexperia
Description: MOSFET N-CH 25V 100A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 2.09mOhm @ 25A, 10V, FET Feature: Schottky Diode (Body), Power Dissipation (Max): 115W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 34.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2485 pF @ 12 V.
Weitere Produktangebote PSMN2R0-25YLDX nach Preis ab 0.57 EUR bis 2.83 EUR
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PSMN2R0-25YLDX | Hersteller : Nexperia USA Inc. |
 Description: MOSFET N-CH 25V 100A LFPAK56Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.09mOhm @ 25A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 34.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2485 pF @ 12 V |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN2R0-25YLDX | Hersteller : Nexperia |
MOSFETs SOT669 N-CH 25V 100A |
auf Bestellung 1447 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN2R0-25YLDX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 25V 100A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.09mOhm @ 25A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 34.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2485 pF @ 12 V |
auf Bestellung 4326 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN2R0-25YLDX | Hersteller : NEXPERIA |
Trans MOSFET N-CH 25V 100A 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN2R0-25YLDX | Hersteller : Nexperia |
Trans MOSFET N-CH 25V 100A 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
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| PSMN2R0-25YLDX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 127A; Idm: 722A Type of transistor: N-MOSFET Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 25V Drain current: 127A Pulsed drain current: 722A Power dissipation: 115W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 4.95mΩ Mounting: SMD Gate charge: 34.1nC Kind of channel: enhancement Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PSMN2R0-25YLDX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 127A; Idm: 722A Type of transistor: N-MOSFET Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 25V Drain current: 127A Pulsed drain current: 722A Power dissipation: 115W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 4.95mΩ Mounting: SMD Gate charge: 34.1nC Kind of channel: enhancement Kind of package: reel; tape |
Produkt ist nicht verfügbar |