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Technische Details PSMN2R0-30YLE,115 Nexperia
Description: NEXPERIA - PSMN2R0-30YLE,115 - Leistungs-MOSFET, n-Kanal, 30 V, 100 A, 1700 µohm, SOT-669, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 30V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 100A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: MSL 1 - unbegrenzt, Gate-Source-Schwellenspannung, max.: 1.7V, Verlustleistung: 272W, SVHC: Lead (25-Jun-2025), Bauform - Transistor: SOT-669, Anzahl der Pins: 5Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 175°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 1700µohm.
Weitere Produktangebote PSMN2R0-30YLE,115 nach Preis ab 1.39 EUR bis 8.9 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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PSMN2R0-30YLE,115 | Nexperia USA Inc. |
 Description: MOSFET N-CH 30V 100A LFPAK56Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V Power Dissipation (Max): 272W (Tc) Vgs(th) (Max) @ Id: 2.15V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5217 pF @ 15 V |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN2R0-30YLE,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1015A; 238W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 1015A Power dissipation: 238W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 3.8mΩ Mounting: SMD Gate charge: 87nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1314 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN2R0-30YLE,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 100A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V Power Dissipation (Max): 272W (Tc) Vgs(th) (Max) @ Id: 2.15V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5217 pF @ 15 V |
auf Bestellung 2349 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN2R0-30YLE,115 | Nexperia |
MOSFETs PSMN2R0-30YLE/SOT669/LFPAK |
auf Bestellung 6238 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN2R0-30YLE,115 | NEXPERIA |
Description: NEXPERIA - PSMN2R0-30YLE,115 - Leistungs-MOSFET, n-Kanal, 30 V, 100 A, 1700 µohm, SOT-669, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 1.7V Verlustleistung: 272W SVHC: Lead (25-Jun-2025) Bauform - Transistor: SOT-669 Anzahl der Pins: 5Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 1700µohm |
auf Bestellung 434 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN2R0-30YLE,115 | Nexperia |
Trans MOSFET N-CH 30V 100A 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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PSMN2R0-30YLE,115 | Nexperia |
Trans MOSFET N-CH 30V 100A 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 8 Stücke Im Einkaufswagen Stück im Wert von UAH |
| PSMN2R0-30YLE,115 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5217 pF @ 15 V
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5217 pF @ 15 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 1.45 EUR |
| PSMN2R0-30YLE,115 |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1015A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 1015A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1015A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 1015A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1314 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 44+ | 1.98 EUR |
| 48+ | 1.78 EUR |
| 52+ | 1.65 EUR |
| 100+ | 1.57 EUR |
| 250+ | 1.43 EUR |
| 500+ | 1.39 EUR |
| PSMN2R0-30YLE,115 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5217 pF @ 15 V
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5217 pF @ 15 V
auf Bestellung 2349 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.69 EUR |
| 10+ | 3.01 EUR |
| 100+ | 2.06 EUR |
| 500+ | 1.64 EUR |
| PSMN2R0-30YLE,115 |
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Hersteller: Nexperia
MOSFETs PSMN2R0-30YLE/SOT669/LFPAK
MOSFETs PSMN2R0-30YLE/SOT669/LFPAK
auf Bestellung 6238 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.74 EUR |
| 10+ | 3.03 EUR |
| 100+ | 2.09 EUR |
| 500+ | 1.67 EUR |
| 1000+ | 1.46 EUR |
| 1500+ | 1.44 EUR |
| PSMN2R0-30YLE,115 |
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Hersteller: NEXPERIA
Description: NEXPERIA - PSMN2R0-30YLE,115 - Leistungs-MOSFET, n-Kanal, 30 V, 100 A, 1700 µohm, SOT-669, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 30V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 100A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 1.7V
Verlustleistung: 272W
SVHC: Lead (25-Jun-2025)
Bauform - Transistor: SOT-669
Anzahl der Pins: 5Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 1700µohm
Description: NEXPERIA - PSMN2R0-30YLE,115 - Leistungs-MOSFET, n-Kanal, 30 V, 100 A, 1700 µohm, SOT-669, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 30V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 100A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 1.7V
Verlustleistung: 272W
SVHC: Lead (25-Jun-2025)
Bauform - Transistor: SOT-669
Anzahl der Pins: 5Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 1700µohm
auf Bestellung 434 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 29+ | 8.9 EUR |
| 44+ | 5.33 EUR |
| 100+ | 3.06 EUR |
| PSMN2R0-30YLE,115 |
|
Hersteller: Nexperia
Trans MOSFET N-CH 30V 100A 5-Pin(4+Tab) LFPAK T/R
Trans MOSFET N-CH 30V 100A 5-Pin(4+Tab) LFPAK T/R
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
| PSMN2R0-30YLE,115 |
|
Hersteller: Nexperia
Trans MOSFET N-CH 30V 100A 5-Pin(4+Tab) LFPAK T/R
Trans MOSFET N-CH 30V 100A 5-Pin(4+Tab) LFPAK T/R
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)