Technische Details PSMN2R0-60PSRQ NEXPERIA
Description: MOSFET N-CH 60V 120A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V, Power Dissipation (Max): 338W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 192 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 30 V.
Weitere Produktangebote PSMN2R0-60PSRQ
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| PSMN2R0-60PSRQ | Hersteller : NEXPERIA |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; NextPowerS3; unipolar; 60V; 120A; Idm: 1135A Type of transistor: N-MOSFET Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Pulsed drain current: 1135A Power dissipation: 338W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 5.1mΩ Mounting: THT Gate charge: 192nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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PSMN2R0-60PSRQ | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 120A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V Power Dissipation (Max): 338W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 192 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 30 V |
Produkt ist nicht verfügbar |
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| PSMN2R0-60PSRQ | Hersteller : Nexperia |
MOSFET PSMN2R0-60PSR/SOT78/SIL3P |
Produkt ist nicht verfügbar |
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| PSMN2R0-60PSRQ | Hersteller : NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 60V; 120A; Idm: 1135A Type of transistor: N-MOSFET Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Pulsed drain current: 1135A Power dissipation: 338W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 5.1mΩ Mounting: THT Gate charge: 192nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |