auf Bestellung 1129 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 14.61 EUR |
| 10+ | 12.53 EUR |
| 25+ | 11.36 EUR |
| 100+ | 10.45 EUR |
| 250+ | 9.83 EUR |
| 500+ | 9.2 EUR |
| 1000+ | 8.94 EUR |
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Technische Details PSMN2R3-100SSEJ Nexperia
Description: APPLICATION SPECIFIC POWER MOSFE, Packaging: Tape & Reel (TR), Package / Case: SOT-1235, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 255A (Tc), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V, Power Dissipation (Max): 341W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: LFPAK88 (SOT1235), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 17200 pF @ 50 V.
Weitere Produktangebote PSMN2R3-100SSEJ
| Foto | Bezeichnung | Hersteller | Beschreibung |
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PSMN2R3-100SSEJ | Hersteller : Nexperia USA Inc. |
 Description: APPLICATION SPECIFIC POWER MOSFEPackaging: Tape & Reel (TR) Package / Case: SOT-1235 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 255A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V Power Dissipation (Max): 341W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK88 (SOT1235) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17200 pF @ 50 V |
Produkt ist nicht verfügbar |
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PSMN2R3-100SSEJ | Hersteller : Nexperia USA Inc. |
Description: APPLICATION SPECIFIC POWER MOSFE Packaging: Cut Tape (CT) Package / Case: SOT-1235 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 255A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V Power Dissipation (Max): 341W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK88 (SOT1235) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17200 pF @ 50 V |
Produkt ist nicht verfügbar |