PSMN2R6-100SSFJ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: NEXTPOWER 80/100V MOSFETS
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 25A, 10V
Power Dissipation (Max): 341W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 191 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12838 pF @ 50 V
auf Bestellung 1998 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 9.68 EUR |
| 10+ | 6.46 EUR |
| 50+ | 5.08 EUR |
| 100+ | 4.63 EUR |
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Technische Details PSMN2R6-100SSFJ Nexperia USA Inc.
Description: NEXTPOWER 80/100V MOSFETS, Packaging: Tape & Reel (TR), Package / Case: SOT-1235, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Ta), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 25A, 10V, Power Dissipation (Max): 341W (Ta), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: LFPAK88 (SOT1235), Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 191 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12838 pF @ 50 V.
Weitere Produktangebote PSMN2R6-100SSFJ nach Preis ab 3.82 EUR bis 10.49 EUR
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PSMN2R6-100SSFJ | Hersteller : Nexperia |
MOSFETs PSMN2R6-100SSF/SOT1235/LFPAK88 |
auf Bestellung 2341 Stücke: Lieferzeit 10-14 Tag (e) |
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| PSMN2R6-100SSFJ | Hersteller : NEXPERIA |
NextPower 100 V, 2.6 m, 200 Amp, N-channel MOSFET in LFPAK88 package |
Produkt ist nicht verfügbar |
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PSMN2R6-100SSFJ | Hersteller : Nexperia USA Inc. |
Description: NEXTPOWER 80/100V MOSFETS Packaging: Tape & Reel (TR) Package / Case: SOT-1235 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 25A, 10V Power Dissipation (Max): 341W (Ta) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK88 (SOT1235) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 191 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12838 pF @ 50 V |
Produkt ist nicht verfügbar |