PSMN2R8-40YSDX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 40V 160A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4507 pF @ 20 V
auf Bestellung 4500 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1500+ | 1.64 EUR |
| 3000+ | 1.54 EUR |
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Technische Details PSMN2R8-40YSDX Nexperia USA Inc.
Description: MOSFET N-CH 40V 160A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 160A (Tc), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V, FET Feature: Schottky Diode (Body), Power Dissipation (Max): 147W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4507 pF @ 20 V.
Weitere Produktangebote PSMN2R8-40YSDX nach Preis ab 1.14 EUR bis 3.72 EUR
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PSMN2R8-40YSDX | Hersteller : Nexperia |
MOSFET PSMN2R8-40YSD/SOT669/LFPAK |
auf Bestellung 2999 Stücke: Lieferzeit 14-28 Tag (e) |
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PSMN2R8-40YSDX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 40V 160A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 147W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4507 pF @ 20 V |
auf Bestellung 7409 Stücke: Lieferzeit 21-28 Tag (e) |
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| PSMN2R8-40YSDX | Hersteller : NEXPERIA |
N-Channel 40 V, 120 A standard level MOSFET |
Produkt ist nicht verfügbar |
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| PSMN2R8-40YSDX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 119A; Idm: 658A Type of transistor: N-MOSFET Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 119A Pulsed drain current: 658A Power dissipation: 147W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 5.4mΩ Mounting: SMD Gate charge: 62nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PSMN2R8-40YSDX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 119A; Idm: 658A Type of transistor: N-MOSFET Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 119A Pulsed drain current: 658A Power dissipation: 147W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 5.4mΩ Mounting: SMD Gate charge: 62nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |