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PSMN2R8-80BS,118 Nexperia USA Inc.


PSMN2R8-80BS.pdf
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9961 pF @ 40 V
auf Bestellung 6900 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
800+2.78 EUR
1600+2.61 EUR
2400+2.52 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details PSMN2R8-80BS,118 Nexperia USA Inc.

Description: MOSFET N-CH 80V 120A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V, Power Dissipation (Max): 306W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: D2PAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9961 pF @ 40 V.

Weitere Produktangebote PSMN2R8-80BS,118 nach Preis ab 2.53 EUR bis 7.52 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
PSMN2R8-80BS,118 PSMN2R8-80BS,118 Nexperia PSMN2R8-80BS.pdf MOSFETs PSMN2R8-80BS/SOT404/D2PAK
auf Bestellung 2598 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.18 EUR
10+4.73 EUR
100+3.45 EUR
500+2.82 EUR
800+2.53 EUR
Im Einkaufswagen  Stück im Wert von  UAH
PSMN2R8-80BS,118 PSMN2R8-80BS,118 Nexperia USA Inc. PSMN2R8-80BS.pdf Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9961 pF @ 40 V
auf Bestellung 7151 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.52 EUR
10+4.98 EUR
100+3.54 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PSMN2R8-80BS,118 PSMN2R8-80BS.pdf
Hersteller: Nexperia
MOSFETs PSMN2R8-80BS/SOT404/D2PAK
auf Bestellung 2598 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+7.18 EUR
10+4.73 EUR
100+3.45 EUR
500+2.82 EUR
800+2.53 EUR
Im Einkaufswagen  Stück im Wert von  UAH
PSMN2R8-80BS,118 PSMN2R8-80BS.pdf
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9961 pF @ 40 V
auf Bestellung 7151 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+7.52 EUR
10+4.98 EUR
100+3.54 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH