PSMN3R2-40YLBX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: PSMN3R2-40YLB/SOT669/LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.05V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4211 pF @ 20 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1500+ | 0.65 EUR |
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Technische Details PSMN3R2-40YLBX Nexperia USA Inc.
Description: PSMN3R2-40YLB/SOT669/LFPAK, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V, FET Feature: Schottky Diode (Body), Power Dissipation (Max): 115W (Tc), Vgs(th) (Max) @ Id: 2.05V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4211 pF @ 20 V.
Weitere Produktangebote PSMN3R2-40YLBX nach Preis ab 0.56 EUR bis 2.31 EUR
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PSMN3R2-40YLBX | Hersteller : Nexperia |
MOSFETs N-channel 40 V, 3.3 mOhm, 120 A logic level MOSFET in LFPAK56 using optimizedNextPowerS3 Schottky-Plus technology |
auf Bestellung 1945 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN3R2-40YLBX | Hersteller : Nexperia USA Inc. |
Description: PSMN3R2-40YLB/SOT669/LFPAK Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 2.05V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4211 pF @ 20 V |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN3R2-40YLBX | Hersteller : NEXPERIA |
Description: NEXPERIA - PSMN3R2-40YLBX - Leistungs-MOSFET, n-Kanal, 40 V, 120 A, 0.0033 ohm, PowerSO, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.05V euEccn: NLR Verlustleistung: 115W Bauform - Transistor: PowerSO Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0033ohm SVHC: Lead (21-Jan-2025) |
auf Bestellung 1980 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN3R2-40YLBX | Hersteller : NEXPERIA |
Description: NEXPERIA - PSMN3R2-40YLBX - Leistungs-MOSFET, n-Kanal, 40 V, 120 A, 0.0033 ohm, PowerSO, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.05V euEccn: NLR Verlustleistung: 115W Anzahl der Pins: 4Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0033ohm SVHC: Lead (21-Jan-2025) |
auf Bestellung 1980 Stücke: Lieferzeit 14-21 Tag (e) |