Produkte > NEXPERIA USA INC. > PSMN3R3-80BS,118
PSMN3R3-80BS,118

PSMN3R3-80BS,118 Nexperia USA Inc.

PSMN3R3-80BS.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8161 pF @ 40 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+2.24 EUR
1600+2.2 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details PSMN3R3-80BS,118 Nexperia USA Inc.

Description: MOSFET N-CH 80V 120A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V, Power Dissipation (Max): 306W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8161 pF @ 40 V.

Weitere Produktangebote PSMN3R3-80BS,118 nach Preis ab 2.31 EUR bis 5.12 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
PSMN3R3-80BS,118 PSMN3R3-80BS,118 Hersteller : Nexperia USA Inc. PSMN3R3-80BS.pdf Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8161 pF @ 40 V
auf Bestellung 4088 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.89 EUR
10+3.83 EUR
100+2.96 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
PSMN3R3-80BS,118 PSMN3R3-80BS,118 Hersteller : Nexperia PSMN3R3-80BS.pdf MOSFETs SOT404 N CHAN 80V
auf Bestellung 4180 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.12 EUR
10+3.96 EUR
100+3.08 EUR
500+2.34 EUR
800+2.31 EUR
Im Einkaufswagen  Stück im Wert von  UAH
PSMN3R3-80BS,118 PSMN3R3-80BS,118 Hersteller : NEXPERIA 3008095745251840psmn3r3-80bs.pdf Trans MOSFET N-CH 80V 120A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
PSMN3R3-80BS,118 PSMN3R3-80BS,118 Hersteller : Nexperia 3008095745251840psmn3r3-80bs.pdf Trans MOSFET N-CH 80V 120A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMN3R3-80BS,118 Hersteller : NEXPERIA PSMN3R3-80BS.pdf PSMN3R3-80BS.118 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH