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PSMN3R5-30YL,115

PSMN3R5-30YL,115 Nexperia USA Inc.


PSMN3R5-30YL.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 15A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2458 pF @ 12 V
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.73 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details PSMN3R5-30YL,115 Nexperia USA Inc.

Description: MOSFET N-CH 30V 100A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 15A, 10V, Power Dissipation (Max): 74W (Tc), Vgs(th) (Max) @ Id: 2.15V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2458 pF @ 12 V.

Weitere Produktangebote PSMN3R5-30YL,115 nach Preis ab 0.67 EUR bis 1.94 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
PSMN3R5-30YL,115 PSMN3R5-30YL,115 Hersteller : NEXPERIA PSMN3R5-30YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 447A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 447A
Power dissipation: 74W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.37mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1196 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
64+1.13 EUR
71+1.02 EUR
72+1.00 EUR
79+0.92 EUR
Mindestbestellmenge: 64
Im Einkaufswagen  Stück im Wert von  UAH
PSMN3R5-30YL,115 PSMN3R5-30YL,115 Hersteller : NEXPERIA PSMN3R5-30YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 447A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 447A
Power dissipation: 74W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.37mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1196 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
64+1.13 EUR
71+1.02 EUR
72+1.00 EUR
79+0.92 EUR
Mindestbestellmenge: 64
Im Einkaufswagen  Stück im Wert von  UAH
PSMN3R5-30YL,115 PSMN3R5-30YL,115 Hersteller : Nexperia PSMN3R5-30YL.pdf MOSFETs PSMN3R5-30YL/SOT669/LFPAK
auf Bestellung 2204 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.88 EUR
10+1.65 EUR
100+1.16 EUR
500+0.93 EUR
1500+0.68 EUR
3000+0.67 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
PSMN3R5-30YL,115 PSMN3R5-30YL,115 Hersteller : Nexperia USA Inc. PSMN3R5-30YL.pdf Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 15A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2458 pF @ 12 V
auf Bestellung 4129 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.94 EUR
11+1.70 EUR
100+1.19 EUR
500+0.99 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
PSMN3R5-30YL,115 PSMN3R5-30YL,115 Hersteller : NEXPERIA psmn3r5-30yl.pdf Trans MOSFET N-CH 30V 100A 5-Pin(4+Tab) LFPAK T/R
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH