| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.45 EUR |
| 10+ | 2.18 EUR |
| 50+ | 1.62 EUR |
| 100+ | 1.44 EUR |
| 1500+ | 0.96 EUR |
| 3000+ | 0.89 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details PSMN3R5-30YL,115 Nexperia
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 447A; 74W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 100A, Power dissipation: 74W, Case: LFPAK56; PowerSO8; SOT669, Gate-source voltage: ±20V, On-state resistance: 3.37mΩ, Mounting: SMD, Gate charge: 19nC, Kind of package: reel; tape, Kind of channel: enhancement, Pulsed drain current: 447A.
Weitere Produktangebote PSMN3R5-30YL,115
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
PSMN3R5-30YL,115 | NEXPERIA |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 447A; 74W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Power dissipation: 74W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 3.37mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 447A |
auf Bestellung 1055 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| PSMN3R5-30YL,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 447A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 74W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.37mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 447A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 447A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 74W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.37mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 447A
auf Bestellung 1055 Stücke:
Lieferzeit 14-21 Tag (e)