| Anzahl | Preis |
|---|---|
| 2+ | 2.01 EUR |
| 10+ | 1.24 EUR |
| 100+ | 0.81 EUR |
| 500+ | 0.64 EUR |
| 1000+ | 0.56 EUR |
| 1500+ | 0.43 EUR |
| 3000+ | 0.41 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PSMN4R0-25YLC,115 Nexperia
Description: MOSFET N-CH 25V 84A LFPAK56, Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 84A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1407 pF @ 12 V, Gate Charge (Qg) (Max) @ Vgs: 22.8 nC @ 10 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 1.95V @ 1mA, Power Dissipation (Max): 61W (Tc).
Weitere Produktangebote PSMN4R0-25YLC,115
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
PSMN4R0-25YLC,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 25V 84A LFPAK56Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 84A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1407 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 22.8 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 1.95V @ 1mA Power Dissipation (Max): 61W (Tc) |
Produkt ist nicht verfügbar |

