Produkte > NEXPERIA > PSMN4R0-25YLC,115
PSMN4R0-25YLC,115

PSMN4R0-25YLC,115 Nexperia


PSMN4R0-25YLC.pdf
Hersteller: Nexperia
MOSFETs PSMN4R0-25YLC/SOT669/LFPAK
auf Bestellung 1328 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.01 EUR
10+1.24 EUR
100+0.81 EUR
500+0.64 EUR
1000+0.56 EUR
1500+0.43 EUR
3000+0.41 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details PSMN4R0-25YLC,115 Nexperia

Description: MOSFET N-CH 25V 84A LFPAK56, Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 84A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1407 pF @ 12 V, Gate Charge (Qg) (Max) @ Vgs: 22.8 nC @ 10 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 1.95V @ 1mA, Power Dissipation (Max): 61W (Tc).

Weitere Produktangebote PSMN4R0-25YLC,115

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
PSMN4R0-25YLC,115 PSMN4R0-25YLC,115 Hersteller : Nexperia USA Inc. PSMN4R0-25YLC.pdf Description: MOSFET N-CH 25V 84A LFPAK56
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1407 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 22.8 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Power Dissipation (Max): 61W (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH