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PSMN4R2-80YSEX

PSMN4R2-80YSEX Nexperia USA Inc.


PSMN4R2-80YSE.pdf Hersteller: Nexperia USA Inc.
Description: PSMN4R2-80YSE/SOT1023/4 LEADS
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 40 V
auf Bestellung 1500 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1500+3.88 EUR
Mindestbestellmenge: 1500
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Technische Details PSMN4R2-80YSEX Nexperia USA Inc.

Description: PSMN4R2-80YSE/SOT1023/4 LEADS, Packaging: Tape & Reel (TR), Package / Case: SOT-1023, 4-LFPAK, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 170A (Tc), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V, Power Dissipation (Max): 294W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 40 V.

Weitere Produktangebote PSMN4R2-80YSEX nach Preis ab 4.45 EUR bis 7.59 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
PSMN4R2-80YSEX PSMN4R2-80YSEX Hersteller : Nexperia USA Inc. PSMN4R2-80YSE.pdf Description: PSMN4R2-80YSE/SOT1023/4 LEADS
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 40 V
auf Bestellung 2707 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+7.51 EUR
10+ 6.3 EUR
100+ 5.1 EUR
500+ 4.53 EUR
Mindestbestellmenge: 4
PSMN4R2-80YSEX PSMN4R2-80YSEX Hersteller : Nexperia PSMN4R2_80YSE-2580599.pdf MOSFET PSMN4R2-80YSE/SOT1023/4 LEADS
auf Bestellung 16930 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
7+7.59 EUR
10+ 6.4 EUR
25+ 6.21 EUR
100+ 5.17 EUR
250+ 5.02 EUR
500+ 4.6 EUR
1000+ 4.45 EUR
Mindestbestellmenge: 7
PSMN4R2-80YSEX PSMN4R2-80YSEX Hersteller : NEXPERIA psmn4r2-80yse.pdf Trans MOSFET N-CH 80V 170A 5-Pin(4+Tab) LFPAK
Produkt ist nicht verfügbar
PSMN4R2-80YSEX Hersteller : NEXPERIA PSMN4R2-80YSE.pdf PSMN4R2-80YSEX SMD N channel transistors
Produkt ist nicht verfügbar
PSMN4R2-80YSEX PSMN4R2-80YSEX Hersteller : Nexperia psmn4r2-80yse.pdf Trans MOSFET N-CH 80V 170A 5-Pin(4+Tab) LFPAK
Produkt ist nicht verfügbar