
PSMN4R2-80YSEX NEXPERIA

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 123A; Idm: 698A; 294W
Case: LFPAK56E; PowerSO8; SOT1023
Mounting: SMD
Kind of package: reel; tape
Gate charge: 110nC
On-state resistance: 9.3mΩ
Gate-source voltage: ±20V
Power dissipation: 294W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 698A
Drain current: 123A
Drain-source voltage: 80V
auf Bestellung 1498 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
19+ | 3.86 EUR |
37+ | 1.94 EUR |
39+ | 1.84 EUR |
200+ | 1.79 EUR |
500+ | 1.77 EUR |
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Produktbewertung abgeben
Technische Details PSMN4R2-80YSEX NEXPERIA
Description: PSMN4R2-80YSE/SOT1023/4 LEADS, Packaging: Tape & Reel (TR), Package / Case: SOT-1023, 4-LFPAK, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 170A (Tc), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V, Power Dissipation (Max): 294W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 40 V.
Weitere Produktangebote PSMN4R2-80YSEX nach Preis ab 1.26 EUR bis 5.26 EUR
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PSMN4R2-80YSEX | Hersteller : NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 123A; Idm: 698A; 294W Case: LFPAK56E; PowerSO8; SOT1023 Mounting: SMD Kind of package: reel; tape Gate charge: 110nC On-state resistance: 9.3mΩ Gate-source voltage: ±20V Power dissipation: 294W Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Pulsed drain current: 698A Drain current: 123A Drain-source voltage: 80V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1498 Stücke: Lieferzeit 7-14 Tag (e) |
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PSMN4R2-80YSEX | Hersteller : Nexperia |
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auf Bestellung 195 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN4R2-80YSEX | Hersteller : Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V Power Dissipation (Max): 294W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 40 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN4R2-80YSEX | Hersteller : Nexperia |
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auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN4R2-80YSEX | Hersteller : Nexperia |
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auf Bestellung 5409 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN4R2-80YSEX | Hersteller : Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V Power Dissipation (Max): 294W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 40 V |
auf Bestellung 3919 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN4R2-80YSEX | Hersteller : NEXPERIA |
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Produkt ist nicht verfügbar |
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PSMN4R2-80YSEX | Hersteller : Nexperia |
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Produkt ist nicht verfügbar |