auf Bestellung 195 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 106+ | 1.38 EUR |
| 111+ | 1.27 EUR |
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Technische Details PSMN4R2-80YSEX Nexperia
Description: PSMN4R2-80YSE/SOT1023/4 LEADS, Packaging: Tape & Reel (TR), Package / Case: SOT-1023, 4-LFPAK, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 170A (Tc), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V, Power Dissipation (Max): 294W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 40 V.
Weitere Produktangebote PSMN4R2-80YSEX nach Preis ab 1.77 EUR bis 5.16 EUR
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PSMN4R2-80YSEX | Hersteller : Nexperia |
 MOSFETs PSMN4R2-80YSE/SOT1023/4 LEADS |
auf Bestellung 15960 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN4R2-80YSEX | Hersteller : Nexperia USA Inc. |
Description: PSMN4R2-80YSE/SOT1023/4 LEADS Packaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V Power Dissipation (Max): 294W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 40 V |
auf Bestellung 1176 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN4R2-80YSEX | Hersteller : Nexperia |
Trans MOSFET N-CH 80V 170A 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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| PSMN4R2-80YSEX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 123A; Idm: 698A; 294W Case: LFPAK56E; PowerSO8; SOT1023 Drain-source voltage: 80V Drain current: 123A On-state resistance: 9.3mΩ Type of transistor: N-MOSFET Power dissipation: 294W Polarisation: unipolar Kind of package: reel; tape Gate charge: 110nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 698A Mounting: SMD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1498 Stücke: Lieferzeit 7-14 Tag (e) |
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| PSMN4R2-80YSEX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 123A; Idm: 698A; 294W Case: LFPAK56E; PowerSO8; SOT1023 Drain-source voltage: 80V Drain current: 123A On-state resistance: 9.3mΩ Type of transistor: N-MOSFET Power dissipation: 294W Polarisation: unipolar Kind of package: reel; tape Gate charge: 110nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 698A Mounting: SMD |
auf Bestellung 1498 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN4R2-80YSEX | Hersteller : NEXPERIA |
Trans MOSFET N-CH 80V 170A 5-Pin(4+Tab) LFPAK |
Produkt ist nicht verfügbar |
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PSMN4R2-80YSEX | Hersteller : Nexperia |
Trans MOSFET N-CH 80V 170A 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
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PSMN4R2-80YSEX | Hersteller : Nexperia USA Inc. |
Description: PSMN4R2-80YSE/SOT1023/4 LEADS Packaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V Power Dissipation (Max): 294W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 40 V |
Produkt ist nicht verfügbar |