auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 166+ | 3.31 EUR |
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Technische Details PSMN4R3-80ES,127 Nexperia
Description: MOSFET N-CH 80V 120A I2PAK, Packaging: Bulk, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V, Power Dissipation (Max): 306W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: I2PAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8161 pF @ 40 V.
Weitere Produktangebote PSMN4R3-80ES,127 nach Preis ab 2.75 EUR bis 3.59 EUR
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PSMN4R3-80ES,127 | Hersteller : Nexperia |
 Trans MOSFET N-CH 80V 120A 3-Pin(3+Tab) I2PAK Rail |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN4R3-80ES,127 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 80V 120A I2PAK Packaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V Power Dissipation (Max): 306W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: I2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8161 pF @ 40 V |
auf Bestellung 1490 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN4R3-80ES,127 | Hersteller : Nexperia |
MOSFET N-Ch 80V 4.3 mOhms |
auf Bestellung 490 Stücke: Lieferzeit 10-14 Tag (e) |
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| PSMN4R3-80ES,127 | Hersteller : NXP Semiconductors |
Trans MOSFET N-CH 80V 120A 3-Pin(3+Tab) I2PAK Rail |
auf Bestellung 495 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN4R3-80ES,127 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 80V 120A 3-Pin(3+Tab) I2PAK Rail |
Produkt ist nicht verfügbar |
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PSMN4R3-80ES,127 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 80V 120A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V Power Dissipation (Max): 306W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: I2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8161 pF @ 40 V |
Produkt ist nicht verfügbar |