PSMN4R3-80ES,127 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 120A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 8161 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 306W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Bulk
| Anzahl | Preis |
|---|---|
| 126+ | 3.59 EUR |
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Technische Details PSMN4R3-80ES,127 Nexperia USA Inc.
Description: MOSFET N-CH 80V 120A I2PAK, Input Capacitance (Ciss) (Max) @ Vds: 8161 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: I2PAK, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 306W (Tc), Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Bulk.
Weitere Produktangebote PSMN4R3-80ES,127
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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PSMN4R3-80ES,127 | Hersteller : Nexperia |
MOSFET N-Ch 80V 4.3 mOhms |
auf Bestellung 490 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN4R3-80ES,127 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 80V 120A I2PAK Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 8161 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: I2PAK Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 306W (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole |
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