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Technische Details PSMN4R5-40BS,118 Nexperia
Description: NEXPERIA - PSMN4R5-40BS,118 - Leistungs-MOSFET, n-Kanal, 40 V, 100 A, 3790 µohm, TO-263 (D2PAK), Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 40V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 100A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 3V, euEccn: NLR, Verlustleistung: 148W, Bauform - Transistor: TO-263 (D2PAK), Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: No, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 3790µohm, SVHC: Lead (25-Jun-2025).
Weitere Produktangebote PSMN4R5-40BS,118 nach Preis ab 1.27 EUR bis 4.71 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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PSMN4R5-40BS,118 | Nexperia USA Inc. |
 Description: MOSFET N-CH 40V 100A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V Power Dissipation (Max): 148W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 42.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2683 pF @ 20 V |
auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN4R5-40BS,118 | Nexperia |
Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 2400 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN4R5-40BS,118 | Nexperia |
Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 2138 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN4R5-40BS,118 | NEXPERIA |
Description: NEXPERIA - PSMN4R5-40BS,118 - Leistungs-MOSFET, n-Kanal, 40 V, 100 A, 3790 µohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 148W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 3790µohm SVHC: Lead (25-Jun-2025) |
auf Bestellung 2138 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN4R5-40BS,118 | Nexperia |
MOSFETs PSMN4R5-40BS/SOT404/D2PAK |
auf Bestellung 2205 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN4R5-40BS,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 100A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V Power Dissipation (Max): 148W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 42.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2683 pF @ 20 V |
auf Bestellung 2166 Stücke: Lieferzeit 10-14 Tag (e) |
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| PSMN4R5-40BS,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2683 pF @ 20 V
Description: MOSFET N-CH 40V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2683 pF @ 20 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 1.56 EUR |
| 1600+ | 1.44 EUR |
| PSMN4R5-40BS,118 |
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Hersteller: Nexperia
Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 2400 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 87+ | 2 EUR |
| 500+ | 1.45 EUR |
| 800+ | 1.27 EUR |
| PSMN4R5-40BS,118 |
|
Hersteller: Nexperia
Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 2138 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 228+ | 2.87 EUR |
| 500+ | 2.68 EUR |
| 1000+ | 2.48 EUR |
| PSMN4R5-40BS,118 |
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Hersteller: NEXPERIA
Description: NEXPERIA - PSMN4R5-40BS,118 - Leistungs-MOSFET, n-Kanal, 40 V, 100 A, 3790 µohm, TO-263 (D2PAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 100A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 148W
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 3790µohm
SVHC: Lead (25-Jun-2025)
Description: NEXPERIA - PSMN4R5-40BS,118 - Leistungs-MOSFET, n-Kanal, 40 V, 100 A, 3790 µohm, TO-263 (D2PAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 100A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 148W
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 3790µohm
SVHC: Lead (25-Jun-2025)
auf Bestellung 2138 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 58+ | 4.34 EUR |
| 71+ | 3.3 EUR |
| 100+ | 2.36 EUR |
| 500+ | 1.98 EUR |
| 1000+ | 1.57 EUR |
| PSMN4R5-40BS,118 |
|
Hersteller: Nexperia
MOSFETs PSMN4R5-40BS/SOT404/D2PAK
MOSFETs PSMN4R5-40BS/SOT404/D2PAK
auf Bestellung 2205 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.69 EUR |
| 10+ | 3.01 EUR |
| 100+ | 2.05 EUR |
| 500+ | 1.75 EUR |
| 800+ | 1.55 EUR |
| 2400+ | 1.46 EUR |
| 4800+ | 1.39 EUR |
| PSMN4R5-40BS,118 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2683 pF @ 20 V
Description: MOSFET N-CH 40V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2683 pF @ 20 V
auf Bestellung 2166 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.71 EUR |
| 10+ | 3.02 EUR |
| 100+ | 2.07 EUR |