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PSMN4R5-40PS,127 Nexperia


PSMN4R5_40PS-2938955.pdf
Hersteller: Nexperia
MOSFET PSMN4R5-40PS/SOT78/SIL3P
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Technische Details PSMN4R5-40PS,127 Nexperia

Description: MOSFET N-CH 40V 100A TO220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 148W (Tc), Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 2683 pF @ 12 V, Gate Charge (Qg) (Max) @ Vgs: 42.3 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V.

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PSMN4R5-40PS,127 PSMN4R5-40PS,127 Nexperia USA Inc. PSMN4R5-40PS.pdf Description: MOSFET N-CH 40V 100A TO220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 148W (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2683 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 42.3 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMN4R5-40PS,127 PSMN4R5-40PS.pdf
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A TO220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 148W (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2683 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 42.3 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH