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PSMN4R8-100BSEJ Nexperia USA Inc.


PSMN4R8-100BSE.pdf
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 278 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 405W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 1600 Stücke:

Lieferzeit 10-14 Tag (e)
AnzahlPreis
800+3.24 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details PSMN4R8-100BSEJ Nexperia USA Inc.

Description: MOSFET N-CH 100V 120A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 278 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 405W (Tc), Rds On (Max) @ Id, Vgs: 4.8mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).

Weitere Produktangebote PSMN4R8-100BSEJ nach Preis ab 3.08 EUR bis 8.68 EUR

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PSMN4R8-100BSEJ PSMN4R8-100BSEJ Nexperia USA Inc. PSMN4R8-100BSE.pdf Description: MOSFET N-CH 100V 120A D2PAK
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 405W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 278 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
auf Bestellung 1819 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.54 EUR
10+5.67 EUR
50+4.43 EUR
100+4.03 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PSMN4R8-100BSEJ PSMN4R8-100BSEJ Nexperia PSMN4R8-100BSE.pdf MOSFETs TO263 100V 120A N-CH MOSFET
auf Bestellung 71 Stücke:
Lieferzeit 10-14 Tag (e)
1+8.68 EUR
10+5.68 EUR
100+3.73 EUR
500+3.08 EUR
Im Einkaufswagen  Stück im Wert von  UAH
PSMN4R8-100BSEJ PSMN4R8-100BSE.pdf
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 120A D2PAK
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 405W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 278 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
auf Bestellung 1819 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+8.54 EUR
10+5.67 EUR
50+4.43 EUR
100+4.03 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PSMN4R8-100BSEJ PSMN4R8-100BSE.pdf
Hersteller: Nexperia
MOSFETs TO263 100V 120A N-CH MOSFET
auf Bestellung 71 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+8.68 EUR
10+5.68 EUR
100+3.73 EUR
500+3.08 EUR
Im Einkaufswagen  Stück im Wert von  UAH